Crystallization kinetics and recording mechanism of a-SiNi bilayer for write-once blue-ray recording

被引：0

作者：

Her, Yung-Chiun ^{[1
]}

Jean, Sen-Tsun ^{[1
]}

Wu, Jyun-Lin ^{[1
]}

机构：

[1] Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 40254, Taiwan

来源：

Journal of Applied Physics | 2007年 / 102卷 / 09期

关键词：

For the a-SiNi bilayer with a thickness ratio of 4:1; the formation of NiSi and Ni Si2 phases took place in the temperature range between 200 and 350 °C and only ∼9% of unreacted a-Si would crystallize to c-Si; which will not cause appreciable reflectivity change. As the thickness ratio of a-Si to Ni was increased to 20:1; the formation of Ni Si2 phase and subsequent crystallization of a-Si mediated by Ni Si2 precipitates were clearly observed. The crystallization temperature of a-Si in the a-SiNi bilayer with a thickness ratio of 20:1 was significantly reduced to around 350 °C; which was 130 °C lower than that in the a-SiCu bilayer. The activation energies for Ni Si2 phase formation and crystallizations of a-Si for the a-SiNi bilayer with a thickness ratio of 20:1 were determined to be 1.12±0.09 and 2.19±0.08 eV; respectively. The crystallization behavior of the a-Si (20 nm) Ni (1 nm) bilayer recording film under pulsed laser irradiation is similar to that under thermal annealing. During the recording process; the Ni Si2 phase will precipitate first and serve as the nucleation sites for the following crystallization of the remaining amorphous Si. The maximum value of carrier to noise ratio for 3 T could reach 43 dB for the write-once blue-ray disk with layer structure of a-Si (20 nm) Ni (1 nm); demonstrating a high potentiality for practical use. © 2007 American Institute of Physics;

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