Current properties of GaN V-defect using conductive atomic force microscopy

被引：0
|
作者：
Lee, Ling [1 ]
Ku, Ching-Shun [1 ]
Ke, Wen-Cheng [1 ]
Ho, Chih-Wei [1 ]
Huang, Huai-Ying [1 ]
Lee, Ming-Chih [1 ]
Chen, Wen-Hsiung [1 ]
Chou, Wu-Chin [1 ]
Chen, Wei-Kuo [1 ]
机构：
[1] Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2006年 / 45卷 / 29-32期
关键词：
Gallium nitride;
D O I：
暂无
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学科分类号：
摘要：
Journal article (JA)
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