Current properties of GaN V-defect using conductive atomic force microscopy

被引：0

作者：

Lee, Ling ^{[1
]}

Ku, Ching-Shun ^{[1
]}

Ke, Wen-Cheng ^{[1
]}

Ho, Chih-Wei ^{[1
]}

Huang, Huai-Ying ^{[1
]}

Lee, Ming-Chih ^{[1
]}

Chen, Wen-Hsiung ^{[1
]}

Chou, Wu-Chin ^{[1
]}

Chen, Wei-Kuo ^{[1
]}

机构：

[1] Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 2006年 / 45卷 / 29-32期

关键词：

Gallium nitride;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

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