Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium

被引：0
|
作者：
Simoen, E. [1 ]
Brugre, A. [1 ,2 ]
Satta, A. [1 ]
Firrincieli, A. [1 ]
Van Daele, B. [1 ]
Brijs, B. [1 ]
Richard, O. [1 ]
Geypen, J. [1 ]
Meuris, M. [1 ]
Vandervorst, W. [1 ,3 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
[2] INPG, Minatec, Grenoble, France
[3] IKS-Dept Physics, KU Leuven, Celestijnenlaan 200-D, B-3001 Leuven, Belgium
来源：
Journal of Applied Physics | 2009年 / 105卷 / 09期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium
    Radek, M.
    Bracht, H.
    Johnson, B. C.
    McCallum, J. C.
    Posselt, M.
    Liedke, B.
    APPLIED PHYSICS LETTERS, 2015, 107 (08)
  • [42] Atomistic investigation of the impact of stress during solid phase epitaxial regrowth
    Sklenard, Benoit
    Barbe, Jean-Charles
    Batude, Perrine
    Rivallin, Pierrette
    Tavernier, Clement
    Cristoloveanu, Sorin
    Martin-Bragado, Ignacio
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1, 2014, 11 (01): : 97 - 100
  • [43] SOLID-PHASE EPITAXIAL REGROWTH OF SB-IMPLANTED SI1-XGEX STRAINED LAYERS - KINETICS AND ELECTRICAL-PROPERTIES
    ATZMON, Z
    EIZENBERG, M
    SHACHAMDIAMAND, Y
    MAYER, JW
    SCHAFFLER, F
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (08) : 3936 - 3943
  • [44] A STUDY OF THE SOLID-PHASE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON UTILIZING DIFFERENTIAL REFLECTOMETRY
    HAGMANN, DR
    XI, W
    HUMMEL, RE
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 110 - 115
  • [45] COMPOSITIONAL DISORDERING BY SOLID-PHASE REGROWTH
    XIA, W
    HAN, CC
    PAPPERT, SA
    HSU, SN
    GUAN, ZF
    YU, PKL
    LAU, SS
    APPLIED PHYSICS LETTERS, 1991, 58 (06) : 625 - 627
  • [46] Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth
    Pawlak, BJ
    Lindsay, R
    Surdeanu, R
    Dieu, B
    Geenen, L
    Hoflijk, I
    Richard, O
    Duffy, R
    Clarysse, T
    Brijs, B
    Vandervorst, W
    Dachs, CJJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (01): : 297 - 301
  • [47] 3-DIMENSIONAL SOLID-PHASE-EPITAXIAL REGROWTH FROM AS+-IMPLANTED SI
    HORIUCHI, M
    TAMURA, M
    AOKI, S
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2238 - 2242
  • [48] SOLID-PHASE EPITAXIAL-GROWTH OF GERMANIUM THROUGH PALLADIUM GERMANIDE LAYERS
    MAJNI, G
    FERRARI, G
    FERRARI, R
    CANALI, C
    CATELLANI, F
    OTTAVIANI, G
    MEA, GD
    THIN SOLID FILMS, 1977, 44 (02) : 193 - 199
  • [49] SOLID-PHASE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON ON MOLECULAR-BEAM EPITAXIAL SILICON SI LAYERS
    CHRISTOU, A
    WILKINS, BR
    DAVEY, JE
    APPLIED PHYSICS LETTERS, 1983, 42 (12) : 1021 - 1023
  • [50] Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon
    Rudawski, N. G.
    Jones, K. S.
    Gwilliam, R.
    MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2008, 61 (1-6): : 40 - 58
12345