Scanning capacitance microscopy (SCM) applications in failure analysis

被引：0
|
作者：
Wang, Xiang-Dong [1 ]
机构：
[1] Freescale Semiconductor Inc., United States
来源：
Electronic Device Failure Analysis | 2011年 / 13卷 / 04期
关键词：
D O I：
10.31399/asm.edfa.2011-4.p014
中图分类号：
学科分类号：
摘要：
16
引用
收藏
页码：14 / 19
相关论文
共 50 条
  • [1] The application of scanning capacitance microscopy in device failure analysis
    Lau, YM
    Lim, VSW
    Ang, LB
    Trigg, A
    IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2004, : 99 - 102
  • [2] X-sectional Scanning Capacitance Microscopy (SCM) Applications on Deep Submicron Devices at Specific Sites
    Wang, Xiang-Dong
    Tsang, Yuk
    Howard, Clifford
    ISTFA 2010: CONFERENCE PROCEEDINGS FROM THE 36TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 2010, : 98 - +
  • [3] Electrical Fault Localization and Scanning Capacitance Microscopy (SCM) Analysis Methodology on High RDSON Failure of Smart Power Technology IC Device
    Keow, Ang Chung
    Bin Hashim, Ismail
    Sern, Lee Nean
    PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013), 2013, : 423 - 426
  • [4] Theoretical analysis of scanning capacitance microscopy
    Ruda, HE
    Shik, A
    PHYSICAL REVIEW B, 2003, 67 (23):
  • [5] Scanning capacitance microscopy use in the failure analysis of Vcc shorts in an advanced microprocessor
    Wills, KS
    Edwards, H
    Nuygen, L
    Raghunathan, R
    Todd, C
    Vance, A
    ISTFA '98: PROCEEDINGS OF THE 24TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 1998, : 41 - 46
  • [6] Scanning Capacitance Microscopy for Failure Analysis of SOI-based Advanced Microprocessors
    Huat, Lim Soon
    Hnin-Ei, Lwin
    Narang, Vinod
    Chin, J. M.
    ISTFA 2010: CONFERENCE PROCEEDINGS FROM THE 36TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 2010, : 309 - 316
  • [7] Qualitative doping area characterization of SONOS transistor utilizing scanning capacitance microscopy (SCM) and scanning spread resistance microscopy (SSRM)
    Heo, J
    Kim, D
    Kim, CW
    Chung, I
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 : 301 - 304
  • [8] Scanning probe microscopy applications in failure analysis of semiconductor devices
    Wang, Xiang-Dong
    Wang, Xiang-Dong (Xiang-Dong.Wang@NXP.com), 1600, ASM International (22): : 20 - 25
  • [9] SCANNING CAPACITANCE MICROSCOPY
    BUGG, CD
    KING, PJ
    JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1988, 21 (02): : 147 - 151
  • [10] SCANNING CAPACITANCE MICROSCOPY
    MATEY, JR
    BLANC, J
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) : 1437 - 1444
12345