Reduced-Ripple p-channel metal-oxide-semiconductor field-effect transistor charge pump circuit with small filtering capacitance

被引：0
|
作者：
Jaw, Boy-Yiing [1 ]
Lin, Hongchin [1 ]
机构：
[1] Department of Electrical Engineering, National Chung-Hsing University, Taichung 402, Taiwan
来源：
Japanese Journal of Applied Physics | 2012年 / 51卷 / 2 PART 2期
关键词：
Complementary metal oxide semiconductors - Driving capacity - High voltage gain - Output current - Output voltage ripple - Ripple reduction - Ripple voltage - Supply voltages;
D O I：
02BE09
中图分类号：
学科分类号：
摘要：
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