Thermoelectric properties of undoped p-type CoSb3 prepared by vertical Bridgman crystal growth and spark plasma sintering

被引：0
|
作者：
Furuyama, Satoru [1 ]
Iida, Tsutomu [1 ]
Matsui, Shinsuke [1 ]
Akasaka, Masayasu [1 ]
Nishio, Keishi [1 ]
Takanashi, Yoshifumi [1 ]
机构：
[1] Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba, 278-8510, Japan
来源：
Journal of Alloys and Compounds | 2006年 / 415卷 / 1-2期
关键词：
Semiconductor materials;
D O I：
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学科分类号：
摘要：
Journal article (JA)
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页码：251 / 256
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