Phosphorus-doped silicon solar cells

被引：0
|
作者：
Tursunov, M.N. [1 ]
Dadamukhamedov, S. [1 ]
Yakubova, M.S. [1 ]
Yarbekov, A. [1 ]
Tursunkulov, O.M. [1 ]
Tukfatullin, O.F. [1 ]
机构：
[1] Physisotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan
来源：
Applied Solar Energy (English translation of Geliotekhnika) | 2006年 / 42卷 / 02期
关键词：
2;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：18 / 20
相关论文
共 50 条
  • [11] ON THE DETERMINATION OF PHOSPHORUS DEPTH PROFILE IN PHOSPHORUS-DOPED SILICON
    ALFASSI, ZB
    YANG, MH
    JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES, 1989, 132 (01): : 99 - 104
  • [12] Silicon solar cells with interfacial passivation of the highly phosphorus-doped emitter surface by oxygen ion implantation
    Sahu, Rajkumar
    Palei, Srikanta
    Kim, Keunjoo
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2022, 234
  • [13] High Phosphorus-doped Seed Layer in Microcrystalline Silicon Oxide Front Contact Layers for Silicon Heterojunction Solar Cells
    Peng, Chen-Wei
    Lei, Chao
    Ruan, Tianyu
    Zhong, Jun
    Yang, Miao
    Long, Wei
    Yu, Cao
    Li, Yuanmin
    Xu, Xixiang
    2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2019, : 2550 - 2553
  • [14] Microelectronic Structure and Doping Nonuniformity of Phosphorus-Doped CdSeTe Solar Cells
    Jiang, Chun-Sheng
    Farshchi, Rouin
    Nagle, Timothy
    Lu, Dingyuan
    Xiong, Gang
    Mansfield, Lorelle M.
    Reese, Matthew O.
    ACS APPLIED MATERIALS & INTERFACES, 2025, 17 (02) : 3278 - 3288
  • [15] ESR LINEWIDTH IN HEAVILY PHOSPHORUS-DOPED SILICON
    NAGASHIMA, H
    MATSUURA, E
    OCHIAI, Y
    SOLID STATE COMMUNICATIONS, 1972, 11 (05) : 733 - +
  • [16] Synthesis and characterization of phosphorus-doped silicon nanoparticles
    Baldwin, R
    Kauzlarich, SM
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2003, 225 : U46 - U46
  • [17] Quantum confinement in phosphorus-doped silicon nanocrystals
    Melnikov, DV
    Chelikowsky, JR
    PHYSICAL REVIEW LETTERS, 2004, 92 (04) : 4
  • [18] PULSED ENDOR EFFECTS IN PHOSPHORUS-DOPED SILICON
    BROWN, IM
    SLOOP, DJ
    AMES, DP
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 355 - &
  • [19] ENHANCED SPIN SUSCEPTIBILITY IN PHOSPHORUS-DOPED SILICON
    CHAO, KA
    BERGGREN, KF
    PHYSICAL REVIEW LETTERS, 1975, 34 (14) : 880 - 882
  • [20] Microdefects in heavily phosphorus-doped Czochralski silicon
    Wang, Zhenhui
    Ma, Xiangyang
    Yang, Deren
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV, 2011, 178-179 : 201 - +
12345