Effect of hydrogen on secondary grain growth of polycrystalline silicon films by excimer laser annealing in low-temperature process

被引：0

作者：

Heya, Akira ^{[1
]}

Matsuo, Naoto ^{[1
]}

Matsumura, Hideki ^{[2
]}

Kawamoto, Naoya ^{[3
]}

机构：

[1] University of Hyogo, 2167 Shosya, Himeji, Hyogo 671-2280, Japan

[2] Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

[3] Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 9 A期

关键词：

The effect of hydrogen on the crystallization of amorphous silicon (a-Si) by excimer laser annealing was investigated for a-Si films deposited on silicon nitride (SiNx) films. The effect of hydrogen atoms provided from SiNx films at various hydrogen concentrations was particularly studied. As hydrogen concentration increases; the grain size of polycrystalline silicon (poly-Si) films increases. It is found that high-quality poly-Si films are obtained at a low laser energy density by controlling the hydrogen concentration in the SiNx films and the laser energy density. © 2006 The Japan Society of Applied Fhysics;

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学科分类号：

摘要：

Journal article (JA)

引用

页码：6908 / 6910

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