Low-operating-voltage solution-processed InZnO thin-film transistors using high-k SrTa2O6

被引：0
|
作者：
Lu, Li [1 ]
Miura, Yuta [1 ]
Nishida, Takashi [1 ,2 ]
Echizen, Masahiro [1 ]
Ishikawa, Yasuaki [1 ,2 ]
Uchiyama, Kiyoshi [3 ]
Uraoka, Yukiharu [1 ,2 ]
机构：
[1] Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan
[2] CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
[3] Tsuruoka National College of Technology, Tsuruoka, Yamagata 997-8511, Japan
来源：
Japanese Journal of Applied Physics | 2012年 / 51卷 / 3 PART 2期
关键词：
Diffusion of oxygens - High dielectric constants - Low operating voltage - Low threshold voltage - Low turn-on voltages - ON/OFF current ratio - Saturation mobility - Thin-film transistor (TFTs);
D O I：
03CB05
中图分类号：
学科分类号：
摘要：
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