Ionization and shielding of interface states in native p+ -Si/ SiO2 probed by electric field induced second harmonic generation

被引：0
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作者：
Scheidt, T. [1 ]
Rohwer, E.G. [1 ]
Neethling, P. [1 ]
Von Bergmann, H.M. [1 ]
Stafast, H. [2 ]
机构：
[1] Laser Research Institute, Physics Department, University of Stellenbosch, Private Bag X1, Matieland 7602, South Africa
[2] Institut für Photonische Technologien (IPHT), POB 100239, D-07702 Jena, Germany
来源：
Journal of Applied Physics | 2008年 / 104卷 / 08期
关键词：
Ionization;
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Journal article (JA)
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