Erratum: Ferroelectric thin films: Review of materials, properties, and applications (Journal of Applied Physics (2006) 100 (051606))

被引:0
|
作者
Setter, N.
Damjanovic, D.
Eng, L.
Fox, G.
Gevorgian, S.
Hong, S.
Kingon, A.
Kohlstedt, H.
Park, N.Y.
Stephenson, G.B.
Stolitchnov, I.
Taganstev, A.K.
Taylor, D.V.
Yamada, T.
Streiffer, S.
机构
[1] Ceramics Laboratory, Swiss Federal Institute of Technology (EPFL), CH-1015 Lausanne, Switzerland
[2] Institute of Applied Physics/Photophysics, University of Technology Dresden, Dresden D-01062, Germany
[3] Ramtron Int. Corp., Colorado Springs, CO 80921, United States
[4] Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
[5] Microwave and High Speed Electronics Research Center, Ericsson AB, 431 84 Moelndal, Sweden
[6] Nano Devices Laboratory, Samsung Advanced Institute of Technology, Suwon, 440-600, Korea, Republic of
[7] Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
[8] Institut für Festkörperforschung (IFF), Forschungszentrum Jülich, 52425 Jülich, Germany
[9] Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, United States
[10] Nanosys Inc., Palo Alto, CA 94304, United States
[11] Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States
来源
Journal of Applied Physics | 1600年 / 100卷 / 10期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Erratum (ER)
引用
收藏
相关论文
共 50 条
  • [33] Erratum: Memory device applications of a conjugated polymer: Role of space charges (Journal of Applied Physics (2002) 91 (2433))
    Majumdar, Himadri S.
    Bandyopadhyay, Anirban
    Bolognesi, Alberto
    Pal, Amlan J.
    Journal of Applied Physics, 2002, 91 (08):
  • [34] Ferroelectric and piezoelectric properties of bismuth layered thin films grown on (100) Pt electrodes
    Simoes, A. Z.
    Riccardi, C. S.
    Ries, A.
    Ramirez, M. A.
    Longo, E.
    Varela, J. A.
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2008, 196 (1-3) : 10 - 14
  • [35] Ferroelectric properties of II-VI type semiconducting thin films on Si(100)
    Hotta, Y
    Tabata, H
    Kawai, T
    FERROELECTRIC THIN FILMS VIII, 2000, 596 : 475 - 480
  • [36] Erratum: In situ analysis of elemental depth distributions in thin films by combined evaluation of synchrotron x ray fluorescence and diffraction (Journal of Applied Physics (2011) 109 (12351))
    Mainz, R. (roland.mainz@helmholtz-berlin.de), 1600, American Institute of Physics, 2 Huntington Quadrangle, Suite N101, Melville, NY 11747-4502, United States (111):
  • [37] Erratum: Modeling and simulation of tunneling through ultra-thin gate dielectrics (Journal of Applied Physics (1997) 81 (7900))
    Schenk, A.
    Journal of Applied Physics, 1600, 101 (09):
  • [38] Electrode of PZT thin films: Review of materials, structures, and properties
    Sun Qiu
    Cheng Haitao
    Wang Fuping
    RARE METAL MATERIALS AND ENGINEERING, 2008, 37 (02) : 200 - 204
  • [39] Review and perspective on ferroelectric HfO2-based thin films for memory applications
    Min Hyuk Park
    Young Hwan Lee
    Thomas Mikolajick
    Uwe Schroeder
    Cheol Seong Hwang
    MRS Communications, 2018, 8 : 795 - 808
  • [40] Review and perspective on ferroelectric HfO2-based thin films for memory applications
    Park, Min Hyuk
    Lee, Young Hwan
    Mikolajick, Thomas
    Schroeder, Uwe
    Hwang, Cheol Seong
    MRS COMMUNICATIONS, 2018, 8 (03) : 795 - 808