Field emission of silicon emitter arrays coated with sol-gel (Ba0.65 Sr0.35) 1-x Lax TiO3 thin films

被引：0
|
作者：
Lu, H. [1 ]
Pan, J.S. [2 ]
Chen, X.F. [3 ]
Zhu, W.G. [4 ]
机构：
[1] Key Laboratory of Optoelectronic Technology and Systems, Chongqing University, Education Ministry of China, Chongqing 400044, China
[2] Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore
[3] Electronic Materials Research Laboratory, School of Electronic and Information Engineering, Xi'An Jiaotong University, 28 Xian Ning Road West, Xi'an 710049, China
[4] Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
来源：
Journal of Applied Physics | 2007年 / 102卷 / 01期
关键词：
(Ba0.65 Sr0.35) 1-x Lax TiO3 (BSLT) thin films with different La concentrations have been deposited on Si field emitter arrays (FEAs) using sol-gel technology for field electron emission applications. The films exhibit the perovskite structure at low La substitution level (x0.5) and the pyrochlore phase at high La concentration (x0.75). The 30-nm-thick BSLT (x=0.25) thin film has higher crystallinity of perovskite structure in the surface region. An x-ray photoelectron spectroscopy study indicates that the oxygen vacancy concentration decreases with La substitution. With respect to the undoped Ba0.65 Sr0.35 TiO3 thin film; the Fermi level shifts down for the BSLT sample with x=0.1 ascribed to the decreasing oxygen vacancy concentration; and then shifts up for the BSLT sample with x=0.25 attributed to the increasing La substitution level. In highly doped films with an x value over 0.5; it shifts down again associated with the second pyrochlore phase formation. The best enhancement in field emission is found for the BSLT-coated (x=0.25) Si FEAs due to the improved perovskite structure in the surface region and up-moved Fermi level of the coating. © 2007 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Microstructure and electrical properties of (Ba,Sr)TiO3 thin films prepared by a sol-gel method
    Ren, Tian-Ling
    Wang, Xiao-Ning
    Liu, Jian-She
    Zhao, Hong-Jin
    Shao, Tian-Qi
    Liu, Li-Tian
    Li, Zhi-Jian
    Integrated Ferroelectrics, 2002, 45 : 13 - 21
  • [22] Nonlinear behaviors of the compositionally graded (Ba,Sr)TiO3 thin films derived by a sol-gel process
    Zhai, JW
    Chen, H
    APPLIED PHYSICS LETTERS, 2004, 84 (07) : 1162 - 1164
  • [23] Preparation and characterization of epitaxial-grown Ba0.65Sr0.35TiO3 thin films by the sol-gel process on Pt/MgO substrates
    Zhang, TJ
    Ni, H
    Wang, W
    JOURNAL OF MATERIALS SYNTHESIS AND PROCESSING, 2002, 10 (01) : 17 - 21
  • [24] Fabrication and electrical properties of Ba0.64Sr0.36TiO3 thin films by sol-gel on platinum coated silicon
    Tian-Jin Zhang
    Hong Ni
    Journal of Materials Science, 2002, 37 : 4155 - 4158
  • [25] Fabrication and electrical properties of Ba0.64Sr0.36TiO3 thin films by sol-gel on platinum coated silicon
    Zhang, TJ
    Ni, H
    JOURNAL OF MATERIALS SCIENCE, 2002, 37 (19) : 4155 - 4158
  • [26] The dielectrical properties of (B,Si) doped (Ba,Sr)TiO3 thin films fabricated by sol-gel technique
    Yang, XJ
    Yao, X
    Zhang, LY
    CERAMICS INTERNATIONAL, 2004, 30 (07) : 1763 - 1765
  • [27] Sol-gel derived (Ba0.5Sr0.5)TiO3 thin films and their electrical and dielectric properties
    Nayak, M
    Lee, SY
    Tseng, TY
    FERROELECTRICS, 2001, 259 (1-4) : 239 - 249
  • [28] Fabrication and characterisation of (Ba,Sr)TiO3 thin films by sol-gel technique through organic precursor route
    Giridharan, NV
    Varatharajan, R
    Jayavel, R
    Ramasamy, P
    MATERIALS CHEMISTRY AND PHYSICS, 2000, 65 (03) : 261 - 265
  • [29] Fabrication and electrical characterization of epitaxially grown (Ba,Sr)TiO3 thin films prepared by sol-gel method
    Hosokura, Tadasu
    Ando, Akira
    Sakabe, Yukio
    ELECTROCERAMICS IN JAPAN IX, 2006, 320 : 81 - 84
  • [30] Influence of annealing temperature on the band structure of sol-gel Ba0.65Sr0.35TiO3 thin films on n-type Si(100)
    Lu, H
    Pan, JS
    Chen, XF
    Zhu, WG
    Tan, OK
    APPLIED PHYSICS LETTERS, 2006, 88 (13)
12345