Field emission of silicon emitter arrays coated with sol-gel (Ba0.65 Sr0.35) 1-x Lax TiO3 thin films

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作者：
Lu, H. [1 ]
Pan, J.S. [2 ]
Chen, X.F. [3 ]
Zhu, W.G. [4 ]
机构：
[1] Key Laboratory of Optoelectronic Technology and Systems, Chongqing University, Education Ministry of China, Chongqing 400044, China
[2] Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore
[3] Electronic Materials Research Laboratory, School of Electronic and Information Engineering, Xi'An Jiaotong University, 28 Xian Ning Road West, Xi'an 710049, China
[4] Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
来源：
Journal of Applied Physics | 2007年 / 102卷 / 01期
关键词：
(Ba0.65 Sr0.35) 1-x Lax TiO3 (BSLT) thin films with different La concentrations have been deposited on Si field emitter arrays (FEAs) using sol-gel technology for field electron emission applications. The films exhibit the perovskite structure at low La substitution level (x0.5) and the pyrochlore phase at high La concentration (x0.75). The 30-nm-thick BSLT (x=0.25) thin film has higher crystallinity of perovskite structure in the surface region. An x-ray photoelectron spectroscopy study indicates that the oxygen vacancy concentration decreases with La substitution. With respect to the undoped Ba0.65 Sr0.35 TiO3 thin film; the Fermi level shifts down for the BSLT sample with x=0.1 ascribed to the decreasing oxygen vacancy concentration; and then shifts up for the BSLT sample with x=0.25 attributed to the increasing La substitution level. In highly doped films with an x value over 0.5; it shifts down again associated with the second pyrochlore phase formation. The best enhancement in field emission is found for the BSLT-coated (x=0.25) Si FEAs due to the improved perovskite structure in the surface region and up-moved Fermi level of the coating. © 2007 American Institute of Physics;
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