Investigation of the Spectral Photosensitivity of nGaAs-n+(GaAs)1-x-y(Ge2)x(ZnSe)y Heterostructure Obtained from Bi Solution-Melt

This paper presents the possibility of the formation of a (GaAs)1-y-x( Ge2)y(ZnSe)x solid solution based on chemical elements of groups II, III, IV, V and VI depending on the charge state and covalent radii of the molecules of the solution-forming components. This paper presents the results of experimental studies of the spectral photosensitivity of the n-GaAs-n+(GaAs)1-x-y (Ge2)x(ZnSe)y heterostructure and atomic force microscopy of the surface of an epitaxial film of a molecular substitution solid solution (GaAs)1-y-x( Ge2)y(ZnSe)x grown from Bi solution-melt on GaAs substrates. The photosensitivity of n-GaAs-n+ (GaAs)1-x-y(Ge2)x(ZnSe)y heterostructures covers the photon energy range from 1.3 eV to 2.5 eV, with maxima at 1.6 eV, 2.0 eV, and 2.4 eV. On the surface of the (GaAs)1-y-x( Ge2)y(ZnSe)x epitaxial film, nanocrystallites with a height c ∼ 6.5-7.5 nm and a base width ∼ 120-150 nm were found. The concentration of nanocrystals on the surface of the epitaxial film was ∼ 2.5 108 sm-2. © 2024 Korean Institute of Electrical Engineers. All rights reserved.