Investigation of the Spectral Photosensitivity of nGaAs-n+(GaAs)1-x-y(Ge2)x(ZnSe)y Heterostructure Obtained from Bi Solution-Melt

被引：0
|
作者：
Kuzievich I.S. [1 ]
Safarbaevich S.A. [2 ]
Negmatovich U.S. [2 ]
Valixanovich S.D. [2 ]
Odilovich E.D. [2 ]
Palvanovna A.U. [3 ]
Gayratovich B.S. [4 ]
机构：
[1] Urgench branch of Tashkent University of Information Technologies, Urgench city
[2] Physico-Technical Institute, Academy of Sciences of the Republic of Uzbekistan
[3] Urgench State University, Urgench
[4] Kumoh National Institute of Technology, Gumi-si, Gyeongsangbuk-do
来源：
Transactions of the Korean Institute of Electrical Engineers | 2024年 / 73卷 / 06期
关键词：
epitaxial layer; heterostructure; molecular substitution; nanocrystallites; near-ir regions of the radiation spectrum; solid solution; spectral photosensitivity;
D O I：
10.5370/KIEE.2024.73.6.980
中图分类号：
学科分类号：
摘要：
This paper presents the possibility of the formation of a (GaAs)1-y-x( Ge2)y(ZnSe)x solid solution based on chemical elements of groups II, III, IV, V and VI depending on the charge state and covalent radii of the molecules of the solution-forming components. This paper presents the results of experimental studies of the spectral photosensitivity of the n-GaAs-n+(GaAs)1-x-y (Ge2)x(ZnSe)y heterostructure and atomic force microscopy of the surface of an epitaxial film of a molecular substitution solid solution (GaAs)1-y-x( Ge2)y(ZnSe)x grown from Bi solution-melt on GaAs substrates. The photosensitivity of n-GaAs-n+ (GaAs)1-x-y(Ge2)x(ZnSe)y heterostructures covers the photon energy range from 1.3 eV to 2.5 eV, with maxima at 1.6 eV, 2.0 eV, and 2.4 eV. On the surface of the (GaAs)1-y-x( Ge2)y(ZnSe)x epitaxial film, nanocrystallites with a height c ∼ 6.5-7.5 nm and a base width ∼ 120-150 nm were found. The concentration of nanocrystals on the surface of the epitaxial film was ∼ 2.5 108 sm-2. © 2024 Korean Institute of Electrical Engineers. All rights reserved.
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页码：980 / 986
页数：6
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