Wide band gap semiconductor alloy: X (LiGa O2)12 - (1-x) ZnO

被引：0
|
作者：
Omata, Takahisa [1 ]
Tanaka, Keizo [1 ]
Tazuke, Atsushi [1 ]
Nose, Katsuhiro [1 ]
Otsuka-Yao-Matsuo, Shinya [1 ]
机构：
[1] Division of Materials Science and Manufacturing, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita 565-0871, Japan
来源：
Journal of Applied Physics | 2008年 / 103卷 / 08期
关键词：
Oxide semiconductor alloys of x (LiGa O2)12 - (1-x) ZnO were synthesized by a standard solid state reaction. The wurtzite-type single phases were obtained in the wide composition range of x&le0.38 because the Β-LiGa O2 possesses a wurtzite-derived structure and approximately the same lattice constants with ZnO. The resulting alloys showed characteristics of wide band gap oxide n -type semiconductor; the optical transparency reached over to the ultraviolet (UV) light. The electrical conductivity and energy band gap for 0.38 (LiGa O2)12 -0.62ZnO were 8.2 -1 cm-1 and 3.7 eV; respectively; at room temperature. The alloy is a good candidate for the barrier material of the ZnO-based heterostructures and UV-transparent electrodes. © 2008 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [31] Structural and electrochemical study of Li[CrxLi(1-x)/3Mn2(1-x)/3]O2 (0≤x≤ 0.328) cathode materials
    Park, C. W.
    Kim, S. H.
    Nahm, K. S.
    Chung, H. T.
    Lee, Y. S.
    Lee, J. H.
    Boo, S.
    Kim, J.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2008, 449 (1-2) : 343 - 348
  • [32] X-ray Peak Profile Analysis of Nanostructured (ZnO)1-x(CuO)x Composite Semiconductor
    Chittan, M. Vishnu
    Kumar, C. Mani
    Sailaja, D.
    Kumar, B. Rajesh
    MATERIALS TODAY-PROCEEDINGS, 2018, 5 (10) : 21098 - 21106
  • [33] Some features of the blue luminescence in v-Si(1-x)Ge(x)O2
    J Non Cryst Solids, 3 (234):
  • [34] Synthesis and characterization of nanoscale Ce(x)Ru(1-x)O2 coatings with electrochemical activity
    Zhang, Teng
    Tang, Dian
    Shao, Yanqun
    Ke, Xuebiao
    You, Shaoxin
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2007, 90 (03) : 989 - 992
  • [35] Electrocatalytic oxidation of ethanol on Sn(1-x)Ir(x)O2 electrodes in acid medium
    Profeti, D.
    Servat, K.
    Hahn, F.
    Kokoh, K. B.
    Olivi, P.
    JOURNAL OF APPLIED ELECTROCHEMISTRY, 2008, 38 (06) : 837 - 843
  • [36] Photoluminescenceandstructuralanalysisofwurtzite（ZnO）1-x（V2O5）xcomposite
    Amjid Iqbal
    Arshad Mahmood
    Q.Raza
    A.Shah
    Rashad Rashid
    Zahid Ali
    A.Malik
    U.Aziz
    Journal of Semiconductors, 2018, 39 (08) : 10 - 13
  • [37] IONIC-CONDUCTIVITY OF K-X(ZN(X/2)GE(1-(X/2)))O2 AND K-X(GA-XGE(1-X))O2 SYSTEMS HAVING A CRISTOBALITE STRUCTURE
    MAAZAZ, A
    DELMAS, C
    SOLID STATE IONICS, 1982, 6 (03) : 261 - 266
  • [38] STUDIES ON ELECTRICAL CONDUCTIVITY OF NBO2 AND NBXTI(1-X)O2
    SAKATA, T
    FROMM, E
    ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1973, 398 (02): : 129 - 135
  • [39] Electronic structures of wide-band-gap (SiC)1-x(AlN)x quaternary semiconductors -: art. no. 103702
    Tang, YH
    Tsai, MH
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
  • [40] Band gap and band offsets for ultrathin (HfO2)x(SiO2)1-x dielectric films on Si(100)
    Jin, H.
    Oh, S. K.
    Kang, H. J.
    Cho, M. -H.
    APPLIED PHYSICS LETTERS, 2006, 89 (12)
12345