Wide band gap semiconductor alloy: X (LiGa O2)12 - (1-x) ZnO

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作者：
Omata, Takahisa [1 ]
Tanaka, Keizo [1 ]
Tazuke, Atsushi [1 ]
Nose, Katsuhiro [1 ]
Otsuka-Yao-Matsuo, Shinya [1 ]
机构：
[1] Division of Materials Science and Manufacturing, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita 565-0871, Japan
来源：
Journal of Applied Physics | 2008年 / 103卷 / 08期
关键词：
Oxide semiconductor alloys of x (LiGa O2)12 - (1-x) ZnO were synthesized by a standard solid state reaction. The wurtzite-type single phases were obtained in the wide composition range of x&le0.38 because the Β-LiGa O2 possesses a wurtzite-derived structure and approximately the same lattice constants with ZnO. The resulting alloys showed characteristics of wide band gap oxide n -type semiconductor; the optical transparency reached over to the ultraviolet (UV) light. The electrical conductivity and energy band gap for 0.38 (LiGa O2)12 -0.62ZnO were 8.2 -1 cm-1 and 3.7 eV; respectively; at room temperature. The alloy is a good candidate for the barrier material of the ZnO-based heterostructures and UV-transparent electrodes. © 2008 American Institute of Physics;
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