共 16 条
- [1] AgGaGeS4 crystals for nonlinear laser device applications (vol 45, pg 5795, 2006) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (11): : 9000 - 9000
- [2] AgGaGeS4 crystals for nonlinear laser device applications JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (07): : 5795 - 5797
- [4] Chemical synthesis and crystal growth of AgGaGeS4, a material for mid-IR nonlinear laser applications NONLINEAR FREQUENCY GENERATION AND CONVERSION: MATERIALS, DEVICES, AND APPLICATIONS XIV, 2015, 9347
- [6] Erratum: Ferroelectric thin films: Review of materials, properties, and applications (Journal of Applied Physics (2006) 100 (051606)) Journal of Applied Physics, 1600, 100 (10):
- [8] Erratum: Memory device applications of a conjugated polymer: Role of space charges (Journal of Applied Physics (2002) 91 (2433)) Journal of Applied Physics, 2002, 91 (08):
- [9] Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition ( less than or equal 150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227)) Japanese Journal of Applied Physics, Part 2: Letters, 2006, 45 (17-19):
- [10] Erratum: High-performance short-gate InAlN/GaN heterostructure field-effect transistors (Japanese Journa of Applied Physics (2006) 45 (L843)) Japanese Journal of Applied Physics, Part 2: Letters, 2007, 46 (20-24):