Enhancing the photoluminescence of InAsP/InP strained multiple quantum wells by H+ ions implantation

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State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China [1 ]
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Hongwai Yu Haomibo Xuebao | 2008年 / 4卷 / 317-320期
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