Crystalline nanoscale M203 (M = Gd, Nd) thin films grown by molecular beam epitaxy on Si(111)

被引:0
|
作者
College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China [1 ]
不详 [2 ]
机构
来源
Mater. Trans. | / 8卷 / 2115-2117期
关键词
Bixbyite structure - Gd2O3nd2O3 - In-plane direction - Orientation relationship - Si substrates - Si(111) substrate - Single orientations - Three-fold symmetry;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Antimony segregation and n-type doping in Si/Si(111) films grown by molecular beam epitaxy
    Yurasov, D. V.
    Drozdov, M. N.
    Schmagin, V. B.
    Yunin, P. A.
    Novikov, A. V.
    JOURNAL OF CRYSTAL GROWTH, 2017, 475 : 291 - 294
  • [22] INTERFACE CHARACTERIZATION OF EPITAXIAL AG FILMS ON SI(100) AND SI(111) GROWN BY MOLECULAR-BEAM EPITAXY
    PARK, KH
    SMITH, GA
    RAJAN, K
    WANG, GC
    METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1990, 21 (09): : 2323 - 2332
  • [23] Improvement in the crystalline quality of ZnSe(111) films grown by molecular beam epitaxy using misoriented GaAs(111)A substrates
    Matsumura, Nobuo
    Maemura, Koichiro
    Mori, Tatsushi
    Saraie, Junji
    1600, JJAP, Minato-ku, Japan (34):
  • [24] Wet etching of GaN grown by molecular beam epitaxy on Si(111)
    Palacios, T
    Calle, F
    Varela, M
    Ballesteros, C
    Monroy, E
    Naranjo, FB
    Sánchez-García, MA
    Calleja, E
    Muñoz, E
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (10) : 996 - 1000
  • [25] Thickness dependence of the initial oxidation behaviors of Gd films grown on Si by laser molecular beam epitaxy
    Dawei Yan
    Hong Zhang
    Li Bai
    Xuemin Wang
    Weibin Zhang
    Yuying Wang
    Changle Shen
    Liping Peng
    Weidong Wu
    Journal of Wuhan University of Technology-Mater. Sci. Ed., 2012, 27 : 191 - 194
  • [26] Thickness Dependence of the Initial Oxidation Behaviors of Gd Films Grown on Si by Laser Molecular Beam Epitaxy
    Yan Dawei
    Zhang Hong
    Bai Li
    Wang Xuemin
    Zhang Weibin
    Wang Yuying
    Shen Changle
    Peng Liping
    Wu Weidong
    JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 2012, 27 (02): : 191 - 194
  • [27] Nanoscale Growth of GaAs on Patterned Si(111) Substrates by Molecular Beam Epitaxy
    Chu, Chia-Pu
    Arafin, Shamsul
    Nie, Tianxiao
    Yao, Kaiyuan
    Kou, Xufeng
    He, Liang
    Wang, Chiu-Yen
    Chen, Szu-Ying
    Chen, Lih-Juann
    Qasim, Syed M.
    BenSaeh, Mohammed S.
    Wang, Kang L.
    CRYSTAL GROWTH & DESIGN, 2014, 14 (02) : 593 - 598
  • [28] Electroluminescence at 1.54 μm in Si:Er/Si structures grown by sublimation molecular-beam epitaxy
    V. P. Kuznetsov
    D. Yu. Remizov
    V. N. Shabanov
    R. A. Rubtsova
    M. V. Stepikhova
    D. I. Kryzhov
    A. N. Shushunov
    O. V. Belova
    Z. F. Krasil’nik
    G. A. Maksimov
    Semiconductors, 2006, 40 : 846 - 853
  • [29] Electroluminescence at 1.54 μm in Si:Er/Si structures grown by sublimation molecular-beam epitaxy
    Kuznetsov, V. P.
    Remizov, D. Yu.
    Shabanov, V. N.
    Rubtsova, R. A.
    Stepikhova, M. V.
    Kryzhkov, D. I.
    Shushunov, A. N.
    Belova, O. V.
    Krasil'nik, Z. F.
    Maksimov, G. A.
    SEMICONDUCTORS, 2006, 40 (07) : 846 - 853