Growth and device application of high quality n-type sic single crystals

被引：0
|
作者：
State Key Laboratory of Crystal Materials, Shandong University, Jinan, China [1 ]
不详 [2 ]
机构：
来源：
Rengong Jingti Xuebao | / 6卷 / 1427-1431期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
8
引用
收藏
相关论文
共 50 条
  • [21] Wafer-Scale p-Type SiC Single Crystals with High Crystalline Quality
    Wang, Guobin
    Sheng, Da
    Yang, Yunfan
    Zhang, Zesheng
    Wang, Wenjun
    Li, Hui
    CRYSTAL GROWTH & DESIGN, 2024, 24 (13) : 5686 - 5692
  • [22] Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application
    Hsiao, Chih Jen
    Kakkerla, Ramesh Kumar
    Chang, Po Chun
    Lumbantoruan, Franky Juanda
    Lee, Tsu Ting
    Lin, Yueh Chin
    Chang, Shoou Jinn
    Chang, Edward Yi
    APPLIED PHYSICS LETTERS, 2017, 111 (16)
  • [23] Bottom-up growth of n-type monolayer molecular crystals on polymeric substrate for optoelectronic device applications
    Yanjun Shi
    Lang Jiang
    Jie Liu
    Zeyi Tu
    Yuanyuan Hu
    Qinghe Wu
    Yuanping Yi
    Eliot Gann
    Christopher R. McNeill
    Hongxiang Li
    Wenping Hu
    Daoben Zhu
    Henning Sirringhaus
    Nature Communications, 9
  • [24] Bottom-up growth of n-type monolayer molecular crystals on polymeric substrate for optoelectronic device applications
    Shi, Yanjun
    Jiang, Lang
    Liu, Jie
    Tu, Zeyi
    Hu, Yuanyuan
    Wu, Qinghe
    Yi, Yuanping
    Gann, Eliot
    McNeill, Christopher R.
    Li, Hongxiang
    Hu, Wenping
    Zhu, Daoben
    Sirringhaus, Henning
    NATURE COMMUNICATIONS, 2018, 9
  • [25] Microwave losses of undoped n-type silicon and undoped 4H-SiC single crystals at cryogenic temperatures
    Ho Sang Jung
    Woo Il Yang
    Man Soon Cho
    Kee Nam Joo
    Sang Young Lee
    Electronic Materials Letters, 2014, 10 : 541 - 549
  • [26] Microwave losses of undoped n-type silicon and undoped 4H-SiC single crystals at cryogenic temperatures
    Jung, Ho Sang
    Yang, Woo Il
    Cho, Man Soon
    Joo, Kee Nam
    Lee, Sang Young
    ELECTRONIC MATERIALS LETTERS, 2014, 10 (03) : 541 - 549
  • [27] Growth of Large Single Crystals of n-Type SnS from Halogen-Added Sn Flux
    Kawanishi, Sakiko
    Suzuki, Issei
    Ohsawa, Takeo
    Ohashi, Naoki
    Shibata, Hiroyuki
    Omata, Takahisa
    CRYSTAL GROWTH & DESIGN, 2020, 20 (09) : 5931 - 5939
  • [28] Growth and characterization of high-purity SiC single crystals
    Augustine, G
    Balakrishna, V
    Brandt, CD
    JOURNAL OF CRYSTAL GROWTH, 2000, 211 (1-4) : 339 - 342
  • [29] PHOTOCONDUCTIVITY OF N-TYPE CULNSE2 SINGLE-CRYSTALS
    ABDINOV, AS
    MAMEDOV, VK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 526 - 528
  • [30] DONOR ACTION OF DISLOCATIONS IN N-TYPE SI SINGLE-CRYSTALS
    EREMENKO, VG
    NIKITENKO, VI
    YAKIMOV, EB
    YARYKIN, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (02): : 157 - 160
12345