Atomic and electronic structure of the (2 3 × 2 3) R30° strained Sn reconstruction on Ge/Si(1 1 1)

被引：0
|
作者：
Srour, W. [1 ,2 ]
Tejeda, A. [3 ]
Stoffel, M. [1 ]
Abuín, M. [4 ]
Fagot-Revurat, Y. [1 ]
Fèvre, P. Le [2 ]
Taleb-Ibrahimi, A. [5 ]
Malterre, D. [1 ]
机构：
[1] Université de Lorraine, UMR CNRS 7198, Institut Jean Lamour, BP 70239, Vandoeuvre-lès-Nancy,F-54506, France
[2] Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, Gif sur Yvette,91192, France
[3] Laboratoire de Physique des Solides, Université Paris-Sud, UMR 8502, Orsay,F-91405, France
[4] Dto. de Física de Materiales, Universidad Complutense de Madrid, Madrid,28040, Spain
[5] UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, Gif sur Yvette,91192, France
来源：
Journal of Electron Spectroscopy and Related Phenomena | 2014年 / 195卷
关键词：
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页码：174 / 178
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