Investigation on resistive switching characteristics of amorphous In-Ga-Zn-O thin films with Ag electrode

被引:0
|
作者
机构
[1] Lou, Jian-Zhong
[2] Jia, Chang-Jiang
[3] Hao, Hua
[4] Zhang, Er-Peng
[5] Shi, Shou-Shan
[6] Yan, Xiao-Bing
来源
Yan, X.-B. (xiaobing_yan@126.com) | 1600年 / Chinese Ceramic Society卷 / 43期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Amorphous In-Ga-Zn-O based TFTs and circuits
    Abe, K.
    Kumomi, H.
    Nomura, K.
    Kamiya, T.
    Hirano, M.
    Hosono, H.
    IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2007, : 1779 - +
  • [32] Characteristics of amorphous In-Ga-Zn-O thin-film-transistors with channel layer deposited by bias sputtering
    Zhang, Man
    Xiao, Xiang
    Ju, Xin
    Zhang, Xiaodong
    Zhang, Shengdong
    2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2016, : 127 - 130
  • [33] Effects of electron-beam irradiation on In-Ga-Zn-O thin films
    Hirohashi, Takuya
    Okazaki, Kenichi
    Yamazaki, Shunpei
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (11)
  • [34] The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors
    Tai, Ya-Hsiang
    Liu, Han-Wen
    Chan, Po-Chun
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01) : 33 - 37
  • [35] Operating Temperature Trends in Amorphous In-Ga-Zn-O Thin-Film Transistors
    Hoshino, Ken
    Wager, John F.
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (08) : 818 - 820
  • [36] Amorphous In-Ga-Zn-O thin-film transistor with coplanar homojunction structure
    Sato, Ayumu
    Shimada, Mikio
    Abe, Katsumi
    Hayashi, Ryo
    Kumomi, Hideya
    Nomura, Kenji
    Kamiya, Toshio
    Hirano, Masahiro
    Hosono, Hideo
    THIN SOLID FILMS, 2009, 518 (04) : 1309 - 1313
  • [37] Role of Oxygen in Amorphous In-Ga-Zn-O Thin Film Transistor for Ambient Stability
    Fuh, Chur-Shyang
    Liu, Po-Tsun
    Chou, Yi-Teh
    Teng, Li-Feng
    Sze, S. M.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (01) : Q1 - Q5
  • [38] Influence of heat treatment on physical properties of In-Ga-Zn-O thin films
    Okazaki, Kenichi
    Kanemura, Hiroshi
    Obonai, Toshimitsu
    Koezuka, Junichi
    Takahashi, Masahiro
    Dairiki, Koji
    Yamazaki, Shunpei
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (04)
  • [39] Physical Properties of Amorphous In-Ga-Zn-O Films Deposited at Different Sputtering Pressures
    Yasuno, Satoshi
    Kita, Takashi
    Hino, Aya
    Morita, Shinya
    Hayashi, Kazushi
    Kugimiya, Toshihiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (03)
  • [40] Amorphous In-Ga-Zn-O thin-film transistors fabricated by microcontact printing
    Du, Xiaosong
    Frederick, Ryan T.
    Li, Yajuan
    Zhou, Zheng
    Stickle, William F.
    Herman, Gregory S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (05):