InP bulk crystals grown from various stoichiometric melt

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作者：

China Electronic Technology Group Corporation, Beijing 100846, China ^{[1
]}

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]}

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]}

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来源：

J Rare Earth | 2006年 / SUPPL.卷 / 100-103期

关键词：

Semiconducting indium phosphide;

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摘要：

引用

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[1] InP bulk crystals grown from various stoichiometric melt
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JOURNAL OF RARE EARTHS, 2006, 24 : 100 - 103
[2] GROWTH OF INP CRYSTALS FROM MELT
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JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (01) : 279 - 302
[3] Study on the uniformity of InP single crystals grown from P-rich melt
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[4] Structure of metal single crystals grown in various crystallographic directions from melt
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[5] Optical spectroscopy of bulk GaN crystals grown from a Na-Ga melt
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[8] SEGREGATION IN CRYSTALS GROWN FROM THE MELT
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[9] Crystal structure and optical properties of bulk GaN crystals grown from a melt at reduced pressure
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[10] STRUCTURE OF BORON CRYSTALS GROWN FROM MELT
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