Drastic decrease in dislocations during liquid phase epitaxy growth of GaN single crystals using Na flux method without any artificial processes

被引：0
|
作者：
Kawamura, Fumio [1 ]
Umeda, Hidekazu [1 ]
Kawahara, Minoru [1 ]
Yoshimura, Masashi [1 ]
Mori, Yusuke [1 ]
Sasaki, Takatomo [1 ]
Okado, Hideaki [2 ]
Arakawa, Kazuto [2 ]
Mori, Hirotaro [2 ]
机构：
[1] Graduate School of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
[2] Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 A期
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摘要：
Journal article (JA)
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页码：2528 / 2530
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