UV dosimeters based on Metal-Oxide-Semiconductor structures containing Si nanocrystals

被引:0
|
作者
Arias, A. [1 ]
Nedev, N. [1 ]
Nesheva, D. [2 ]
Curiel, M. [1 ]
Manolov, E. [2 ]
Mateos, D. [1 ]
Dzurkov, V. [2 ]
Valdez, B. [1 ]
Contreras, O. [3 ]
Herrera, R. [1 ]
Bineva, I. [2 ]
Siqueiros, J.M. [3 ]
机构
[1] Institute of Engineering, Autonomous University of Baja California, Benito Juarez Blvd. esc. Calle de la Normal, s/n, Mexicali,B. C., Mexico
[2] Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, Sofia, Bulgaria
[3] Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, A. P. 356, Ensenada,B.C., Mexico
关键词
Compendex;
D O I
10.1166/sl.2015.3337
中图分类号
学科分类号
摘要
Nanocrystals
引用
收藏
页码:561 / 564
相关论文
共 50 条
  • [31] Structural and optical characterization of Ge nanocrystals showing large nonvolatile memories in metal-oxide-semiconductor structures
    Kim, Sung
    Choi, Suk-Ho
    Park, C. J.
    Cho, K. H.
    Cho, H. Y.
    Elliman, R. G.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (03) : 959 - 962
  • [32] Electrical characteristics of GaN-based metal-oxide-semiconductor (MOS) structures
    Abdullah, KA
    Abdullah, MJ
    Yam, FK
    Hassan, Z
    MICROELECTRONIC ENGINEERING, 2005, 81 (2-4) : 201 - 205
  • [33] Direct tunneling gate current in strained-Si/SiGe metal-oxide-semiconductor structures
    Zainuddin, A. N. M.
    Haque, A.
    ICECE 2006: PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING, 2006, : 501 - +
  • [34] Effects of threshold voltage variability on the characteristics of high sensitivity metal-oxide-semiconductor dosimeters
    Sarrabayrouse, G
    Siskos, S
    Boukabache, A
    APPLIED RADIATION AND ISOTOPES, 2005, 63 (5-6) : 775 - 777
  • [35] LATERAL N-I-P-I SUPERLATTICES IN SI METAL-OXIDE-SEMICONDUCTOR STRUCTURES
    HUBER, A
    LORENZ, H
    KOTTHAUS, JP
    BAKKER, S
    KLAPWIJK, TM
    PHYSICAL REVIEW B, 1995, 51 (08): : 5028 - 5032
  • [36] EXPERIMENTAL-STUDY OF INTERFACIAL NA+ IMPURITIES IN SI METAL-OXIDE-SEMICONDUCTOR STRUCTURES
    CZAPUTA, R
    GLASER, E
    MCCOMBE, BD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1074 - 1075
  • [37] Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors
    Meziani, YM
    Lusakowski, J
    Knap, W
    Dyakonova, N
    Teppe, F
    Romanjek, K
    Ferrier, M
    Clerc, R
    Ghibaudo, G
    Boeuf, F
    Skotnicki, T
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) : 5761 - 5765
  • [38] Charge retention effect in metal-oxide-semiconductor structure containing Si nanocrystals prepared by ion-beam-assisted electron beam deposition
    Kim, Y
    Park, KH
    Choi, WC
    Chung, TH
    Bark, HJ
    Yi, JY
    Jeong, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 83 (1-3): : 145 - 151
  • [39] Prediction of the thermal annealing of thick oxide metal-oxide-semiconductor dosimeters irradiated in a harsh radiation environment
    Ravotti, F.
    Glaser, M.
    Saigne, F.
    Dusseau, L.
    Sarrabayrouse, G.
    APPLIED PHYSICS LETTERS, 2006, 89 (08)
  • [40] Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer
    Shieh, Jia-Min
    Lai, Yi-Fan
    Ni, Wei-Xin
    Kuo, Hao-Chung
    Fang, Chih-Yao
    Huang, Jung Y.
    Pan, Ci-Ling
    APPLIED PHYSICS LETTERS, 2007, 90 (05)