Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

被引：0
|
作者：
Hwang, J.D. [1 ]
Lin, C.C. [1 ]
Chen, W.L. [2 ]
机构：
[1] Department of Electrical Engineering, Da-Yeh University, Da-Tsuen, Changhua 515, Taiwan
[2] Department of Electronic Engineering, National Changhua University of Education, Changhua 500, Taiwan
来源：
Journal of Applied Physics | 2006年 / 100卷 / 04期
关键词：
Indium compounds;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
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