Electrical properties of transparent and conducting Ga doped ZnO

被引：0
|
作者：
Bhosle, V. [1 ]
Tiwari, A. [1 ,2 ]
Narayan, J. [1 ]
机构：
[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
[2] Department of Materials Science and Engineering, University of Utah
来源：
Journal of Applied Physics | 2006年 / 100卷 / 03期
关键词：
In this paper; we report on the metal-semiconductor transition behavior observed in transparent and conducting ZnO:Ga films grown by pulsed-laser deposition. The electrical resistivity measurements were carried out on ZnO films with varying Ga concentration in the temperature range of 14 to 300 K. The electrical properties were correlated with film structure; and detailed structural characterization was performed using x-ray diffraction; transmission electron microscopy; and x-ray photoelectron spectroscopy. The room-temperature resistivity of these films was found to decrease with Ga concentration up to 5% Ga; and then increase. The lowest value of resistivity (1.4 ×10 -4 Ω cm) was found at 5% Ga. Temperature dependent resistivity measurements showed a metal-semiconductor transition; which is rationalized by localization of degenerate electrons. A linear variation of conductivity with √T below the transition temperature suggests that the degenerate electrons are in a weak-localization regime. It was also found that the transition temperature is dependent on the Ga concentration and is related to the increase in disorder induced by dopant addition. The results of this research help to understand the additional effects of dopant addition on transport characteristics of transparent conducting oxides (TCOs) and are critical to further improvement and optimization of TCP properties. © 2006 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] Effects of Ga doping and substrate temperature on electrical properties of ZnO transparent conducting films grown by plasma-assisted deposition
    Department of Electrical Engineering, University of Yamanashi, Kofu 400-8511, Japan
    不详
    不详
    Jpn. J. Appl. Phys., 5 PART 3
  • [42] Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition
    Matsumoto, Takashi
    Mizuguchi, Keiichi
    Horii, Takahiro
    Sano, Shiho
    Muranaka, Tsutomu
    Nabetani, Yoichi
    Hiraki, Satoshi
    Furukawa, Hideaki
    Fukasawa, Akihiro
    Sakamoto, Shingo
    Hagihara, Shigeru
    Kono, Hiroshi
    Kijima, Kazuhiro
    Abe, Osamu
    Yashiro, Kouji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (05)
  • [43] Properties of Transparent Conductive Ga-doped ZnO (GZO) Films in Bending
    Nagamoto, Koichi
    Matsubayashi, Yumiko
    Kondo, Takeshi
    Sato, Yasushi
    Makino, Hisao
    Yamamoto, Naoki
    Yamamoto, Tetsuya
    IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2010, : 885 - 888
  • [44] Transparent and conducting Ga-doped ZnO films on flexible substrates prepared by sol–gel method
    Libing Duan
    Xiaoru Zhao
    Yangyang Zhang
    Jianshuo Zhou
    Tingjian Zhao
    Wangchang Geng
    Journal of Materials Science: Materials in Electronics, 2017, 28 : 8669 - 8674
  • [45] Electrical properties of Ga and ZnS doped ZnO prepared by mechanical alloying
    Cook, BA
    Harringa, JL
    Vining, CB
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 5858 - 5861
  • [46] Enhanced electrical properties of ZnO transparent conducting films prepared by electron beam annealing
    Li, Yanli
    Men, Yong
    Kong, Xiangdong
    Gao, Zhaoshun
    Han, Li
    Li, Xiaona
    APPLIED SURFACE SCIENCE, 2018, 428 : 191 - 198
  • [47] Improved electrical properties of ZnO:Al transparent conducting oxide films using a substrate
    Lim, DG
    Kim, DH
    Kim, JK
    Kwon, O
    Yang, KJ
    Park, KI
    Kim, BS
    Lee, SW
    Park, MW
    Kwak, DJ
    SUPERLATTICES AND MICROSTRUCTURES, 2006, 39 (1-4) : 107 - 114
  • [48] Relation of optical and electrical properties to the microstructure of intrinsic transparent conducting ZnO thin films
    Abendroth, B.
    Lim, S. H. N.
    Poppleton, A.
    Remadi, S.
    Bilek, M. M. M.
    McKenzie, D. R.
    PHOTONIC MATERIALS, DEVICES, AND APPLICATIONS III, 2009, 7366
  • [49] Electrical and optical properties of ZnO transparent conducting films by the sol-gel method
    Lee, JH
    Ko, KH
    Park, BO
    JOURNAL OF CRYSTAL GROWTH, 2003, 247 (1-2) : 119 - 125
  • [50] Interfacial Structure and Electrical Properties of Transparent Conducting ZnO Thin Films on Polymer Substrates
    Lim, Young Soo
    Kim, Dae Wook
    Kang, Jong-Ho
    Seo, Seul Gi
    Kim, Bo Bae
    Choi, Hyoung-Seuk
    Seo, Won-Seon
    Cho, Yong Soo
    Park, Hyung-Ho
    MICROSCOPY AND MICROANALYSIS, 2013, 19 : 131 - 135
12345