Fabrication InGaN nanodisk structure in GaN reverse hexagonal pyramid

被引：0
|
作者：
Lin, Chia-Feng [1 ]
Dai, Jing-Jie [1 ]
Zheng, Jing-Hui [1 ]
Yang, Zhong-Jie [1 ]
机构：
[1] Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 B期
关键词：
Gallium nitride;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
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页码：3818 / 3821
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