Gas sensing properties of metal doped WO3 thin film sensors prepared by pulsed laser deposition and DC sputtering process

被引：0
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作者：
Bhuiyan, Md. Mosharraf Hossain [1 ]
Ueda, Tsuyoshi [1 ]
Ikegami, Tomoaki [1 ]
Ebihara, Kenji [1 ]
机构：
[1] Graduate School of Science and Technology, Department of Frontier Technology for Energy and Devices, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 10 B期
关键词：
Tungsten trioxide (WO3) thin films gas sensors were prepared by the KrF excimer pulsed laser deposition (PLD) method. The films were prepared on the quartz glass; silicon and also on the Al2O3 sensor substrates with platinum interdigitated electrodes. The effect of doping of the platinum (Pt); palladium (Pd) or gold (Au) on the WO3 thin film was also investigated. These metals were doped to the WO3 thin film by the DC sputtering process during the PLD. The substrate temperature and the oxygen pressure were 400°C and 100mTorr; respectively; during the deposition. The films were characterized by atomic force microscopy (AFM) and X-ray diffraction (XRD). The sensitivity of the prepared sensors to 60 ppm NO gas was examined using the two terminal resistance method in a chamber at atmospheric pressure and operating temperatures of 25-350°C. The sensitivity of the WO3 thin films doped with Pt; Pd; or Au was found to be higher than that of the undoped WO3 thin film. © 2006 The Japan Society of Applied Physics;
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页码：8469 / 8472
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