The pinch-off effect and inhomogeneous barrier height analysis in Al/p-GaAs Schottky barrier diodes

被引:0
|
作者
Soylu, M. [1 ]
Yakuphanoglu, F. [2 ]
Farooq, W.A. [3 ]
机构
[1] Department of Physics, Faculty of Sciences, Bingöl University, Turkey
[2] Department of Metallurgical and Materials Engineering, Firat University, 23119, Elaziǧ, Turkey
[3] Department of Physics, College of Science, King Saud University, Riyadh, Saudi Arabia
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:135 / 142
相关论文
共 50 条
  • [31] Gaussian distribution of inhomogeneous Barrier Height in Au/n-GaP (100) Schottky Barrier diodes
    Ozer, M.
    Guzel, T.
    Asimov, A.
    Ahmetoglu , M.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2014, 16 (5-6): : 606 - 611
  • [32] Al/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights
    Wang Yue-Hu
    Zhang Yi-Men
    Zhang Yu-Ming
    Song Qing-Wen
    Jia Ren-Xu
    CHINESE PHYSICS B, 2011, 20 (08)
  • [33] Al/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights
    王悦湖
    张义门
    张玉明
    宋庆文
    贾仁需
    Chinese Physics B, 2011, (08) : 388 - 392
  • [34] Gaussian distribution of inhomogeneous barrier height in nanocrystalline graphite (NCG)/p-Si Schottky diodes
    Nawawi, Azfar Abid
    Sultan, Suhana Mohamed
    Abd Rahman, Shaharin Fadzli
    Hui, Pu Suan
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (06)
  • [35] Barrier height enhancement and temperature dependence of the electrical characteristics of Al Schottky contacts on p-GaAs with organic Rhodamine B interfacial layer
    Soylu, Murat
    Yakuphanoglu, Fahrettin
    SUPERLATTICES AND MICROSTRUCTURES, 2012, 52 (03) : 470 - 483
  • [36] Electrical characteristics and inhomogeneous barrier analysis of Au-Be/p-InSe:Cd Schottky barrier diodes
    Duman, S.
    Gurbulak, B.
    Dogan, S.
    Turut, A.
    MICROELECTRONIC ENGINEERING, 2009, 86 (01) : 106 - 110
  • [38] NATURE OF BARRIER HEIGHT VARIATIONS IN ALLOYED AL-SI SCHOTTKY-BARRIER DIODES
    BASTERFIELD, J
    SHANNON, JM
    GILL, A
    SOLID-STATE ELECTRONICS, 1975, 18 (03) : 290 - &
  • [39] Inhomogeneous Barrier Height Analysis of (Ni/Au)-InAlGaN/GaN Schottky Barrier Diode
    Subramaniyam, Nagarajan
    Sopanen, Markku
    Lipsanen, Harri
    Hong, Chang-Hee
    Suh, Eun-Kyung
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (03)
  • [40] Inhomogeneous barrier height analysis of (Ni/Au)-InAlGaN/GaN schottky barrier diode
    Department of Micro and Nanosciences, Aalto University Micronova, PL 13500, 00076 Aalto, Finland
    不详
    Jpn. J. Appl. Phys., 3