Deep saturation of junction voltage at large forward current of light-emitting diodes

被引：0
|
作者：
Feng, L.F. [1 ]
Li, D. [1 ]
Zhu, C.Y. [1 ]
Wang, C.D. [1 ]
Cong, H.X. [2 ]
Zhang, G.Y. [3 ]
Du, W.M. [3 ]
机构：
[1] Department of Applied Physics, Tianjin University, Tianjin 300072, China
[2] Binhai College, Nankai University, Tianjin 300270, China
[3] State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
来源：
Journal of Applied Physics | 2007年 / 102卷 / 09期
关键词：
The dependences of series resistance; ideality factor; and junction voltage of light-emitting diodes (LEDs) on applied voltage or current were characterized accurately using alternating current (ac) behavior combined with I-V plot (ac IV method). The deep saturation of junction voltage and simultaneous decrease of ideality factor of LEDs at large forward current; which imply the pinning of quasi-Fermi levels; were observed. Comparing with our recent study of the similar phenomenon of laser diodes; in which the junction voltage jumps abruptly to a saturated value at lasing threshold; the changes of junction voltage of LEDs are gradual. In addition; the decrease of series resistance with the increasing current and the negative capacitance effect of LEDs were also investigated. © 2007 American Institute of Physics;
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