Effect of hydrogen passivation on the photoluminescence of Tb ions in silicon rich silicon oxide films

被引：0
|
作者：
机构：
[1] Zatryb, G.
[2] Klak, M.M.
[3] Wojcik, J.
[4] Misiewicz, J.
[5] Mascher, P.
[6] Podhorodecki, A.
来源：
| 1600年 / American Institute of Physics Inc.卷 / 118期
关键词：
30;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Photoluminescence from Er-doped silicon rich oxide thin films
    Salem, B.
    Noe, P.
    Mazen, F.
    Calvo, V.
    Hadji, E.
    JOURNAL OF LUMINESCENCE, 2006, 121 (02) : 242 - 244
  • [22] Silicon nanocrystal formation in silicon rich silicon oxide thin films
    Roschuk, T
    Wojcik, J
    Irving, EA
    Flynn, M
    Mascher, P
    APPLICATIONS OF PHOTONIC TECHNOLOGY, CLOSING THE GAP BETWEEN THEORY, DEVELOPMENT, AND APPLICATION, PT 1 AND 2, 2004, 5577 : 450 - 458
  • [23] PHOTOLUMINESCENCE AND PASSIVATION OF SILICON NANOSTRUCTURES
    REDMAN, DA
    FOLLSTAEDT, DM
    GUILINGER, TR
    KELLY, MJ
    APPLIED PHYSICS LETTERS, 1994, 65 (19) : 2386 - 2388
  • [24] Effects of passivation of hydrogen, oxygen and nitrogen on photoluminescence of porous silicon
    Liu, Xiao-Bing
    Shi, Xiang-Hua
    Bandaoti Guangdian/Semiconductor Optoelectronics, 2001, 22 (06):
  • [25] Fabrication and photoluminescence properties of Tb-doped nitrogen-rich silicon nitride films
    An, Y. -T.
    Labbe, C.
    Morales, M.
    Marie, P.
    Gourbilleau, F.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11, 2012, 9 (10-11): : 2207 - 2210
  • [26] Photoconduction in silicon rich oxide films
    Luna-Lopez, J. A.
    Aceves-Mijares, M.
    Carrillo-Lopez, J.
    Morales-Sanchez, A.
    Flores-Gracia, F. J.
    Garcia-Salgado, G.
    XIX LATIN AMERICAN SYMPOSIUM ON SOLID STATE PHYSICS (SLAFES), 2009, 167
  • [27] Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer
    Oudot, Evan
    Gros-Jean, Mickael
    Courouble, Kristell
    Bertin, Francois
    Duru, Romain
    Rochat, Nevine
    Vallee, Christophe
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2018, 36 (01):
  • [28] Optical Properties of Photoluminescence of Carbon Doped Silicon Oxide Films Annealed by Rapid Temperature for Passivation
    Oh, Teresa
    CONVERGENCE AND HYBRID INFORMATION TECHNOLOGY, 2011, 206 : 423 - 428
  • [29] Influence of rapid thermal annealing temperature on the photoluminescence of Tb ions embedded in silicon nitride films
    Klak, M. M.
    Zatryb, G.
    Golacki, L. W.
    Benzo, P.
    Labbe, C.
    Cardin, J.
    Misiewicz, J.
    Gourbilleau, F.
    Podhorodecki, A.
    THIN SOLID FILMS, 2019, 675 : 5 - 10
  • [30] Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films
    Debieu, Olivier
    Cardin, Julien
    Portier, Xavier
    Gourbilleau, Fabrice
    NANOSCALE RESEARCH LETTERS, 2011, 6
12345