Performance improvements of polarization-analyzing CMOS image sensor

被引：0

作者：

Tokuda T. ^{[1
]}

Fujioka Y. ^{[1
]}

Shishido S. ^{[1
]}

Noda T. ^{[1
]}

Sasagawa K. ^{[1
]}

Kakiuchi K. ^{[1
]}

Ohta J. ^{[1
]}

机构：

[1] Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma. Nara. 630-0192

来源：

Kyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers | 2011年 / 65卷 / 03期

关键词：

All Open Access; Bronze; Green;

D O I：

10.3169/itej.65.367

中图分类号：

学科分类号：

摘要：

Performance of a polarization-analyzing CMOS image sensor was improved by two kinds of technical approach. Based on the whole-angle on-chip polarizer approach, a polarization-analyzing CMOS image sensor with multiple polarization-analyzing pixel array sets was designed Using 0.35/μm standard CMOS technology. The accuracy of polarization analysis was improved to σ =0.0022 deg. A performance improvement of the on-chip polarizer was also demonstrated by a new photosensor designed with 65 nm standard CMOS technology.

引用

页码：367 / 371

页数：4

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