Defects in CdxHg1-xTe-based heterostructures grown by molecular beam epitaxy on GaAs(310) substrates

被引：0
|
作者：
Orion Research and Production Association State Scientific Center, sh. Entuziastov 46/2, Moscow, 111123, Russia [1 ]
不详 [2 ]
机构：
来源：
Inorg. Mater. | / 7卷 / 665-670期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Molecular beam epitaxy
引用
收藏
相关论文
共 50 条
  • [41] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES
    KAPON, E
    TAMARGO, MC
    HWANG, DM
    APPLIED PHYSICS LETTERS, 1987, 50 (06) : 347 - 349
  • [42] Microphotoluminescence of oval defects in a GaAs layer grown by molecular beam epitaxy
    Kasai, J
    Kawata, M
    APPLIED PHYSICS LETTERS, 1998, 73 (14) : 2012 - 2014
  • [43] MOLECULAR-BEAM EPITAXY OF II-VI COMPOUNDS - CDXHG1-XTE
    FAURIE, JP
    MILLION, A
    JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) : 582 - 585
  • [44] Factors Determining the Morphology of CdxHg1-xTe Films in the Course of Molecular Beam Epitaxy
    Sabinina, I. V.
    Gutakovskii, A. K.
    Sidorov, Yu. G.
    Varavin, V. S.
    Latyshev, A. V.
    JOURNAL OF SURFACE INVESTIGATION, 2008, 2 (01): : 120 - 126
  • [45] Investigation of whisker defects on molecular beam epitaxy grown GaAs layers
    Kadhim, NJ
    Mukherjee, D
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1996, 15 (15) : 1330 - 1331
  • [46] Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy
    Zanelato, G
    Pusep, YA
    Galzerani, JC
    Lubyshev, DI
    González-Borrero, PP
    PHYSICA E, 2001, 10 (04): : 587 - 592
  • [47] Thermal properties of cubic GaN/GaAs heterostructures grown by molecular beam epitaxy
    Macias, Marcos
    Lucero Casallas-Moreno, Yenny
    Camacho-Reynoso, Marlene
    Alberto Zambrano-Serrano, Mario
    Guadalupe Perez-Hernandez, Briseida
    Yee-Rendon, C. M.
    Gurevich, Yuri G.
    Lopez-Lopez, Maximo
    Cruz-Orea, Alfredo
    JOURNAL OF APPLIED PHYSICS, 2020, 128 (13)
  • [48] Spontaneous composition modulation during CdxHg1−xTe(301) molecular beam epitaxy
    I. V. Sabinina
    A. K. Gutakovsky
    Yu. G. Sidorov
    A. V. Latyshev
    JETP Letters, 2011, 94 : 324 - 328
  • [49] Interaction of cadmium vapor with the surface of CdxHg1−xTe layers during molecular beam epitaxial growth on GaAs substrates
    A. A. Babenko
    D. V. Brunev
    Yu. G. Sidorov
    V. A. Shvets
    M. V. Yakushev
    Inorganic Materials, 2008, 44 : 366 - 370
  • [50] Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy
    C. H. Lin
    R. J. Hwu
    L. P. Sadwick
    Journal of Materials Research, 2001, 16 : 3266 - 3273
12345