Inductively coupled plasma mesa etched InGaN/GaN light emitting diodes using Cl2/BCl3/Ar plasma

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Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan [1 ]
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Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 9 A卷 / 6800-6802期
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Hole concentration - InGaN/GaN LED - Sputter desorption - Surface oxidation;
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