Photosensitive properties of α-IGZO thin-film field-effect transistors

被引：0
|
作者：
机构：
[1] Chen, Li-Qiang
[2] Yang, Sheng-Yi
[3] Yu, Zhi-Nong
[4] Xue, Wei
[5] Zou, Bing-Suo
来源：
Yang, S.-Y. (syyang@bit.edu.cn) | 1600年 / Board of Optronics Lasers, No. 47 Yang-Liu-Qing Ying-Jian Road, Tian-Jin City, 300380, China卷 / 24期
关键词：
Threshold voltage;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Understanding and modelling the PBTI reliability of thin-film IGZO transistors
    Chasin, A.
    Franco, J.
    Triantopoulos, K.
    Dekkers, H.
    Rassoul, N.
    Belmonte, A.
    Smets, Q.
    Subhechha, S.
    Claes, D.
    van Setten, M. J.
    Mitard, J.
    Delhougne, R.
    Afanas'ev, V
    Kaczer, B.
    Kar, G. S.
    2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2021,
  • [42] Amorphous IGZO Thin-Film Transistors With Ultrathin Channel Layers
    Chiang, Tsung-Han
    Yeh, Bao-Sung
    Wager, John F.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (11) : 3692 - 3696
  • [43] Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors
    Kim, Min Jae
    Park, Hyeong Jin
    Yoo, Sungwon
    Cho, Min Hee
    Jeong, Jae Kyeong
    IEEE Transactions on Electron Devices, 2022, 69 (05): : 2409 - 2416
  • [44] 100-nm IGZO Thin-Film Transistors With Film Profile Engineering
    Lin, Horng-Chih
    Shie, Bo-Shiuan
    Huang, Tiao-Yuan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (06) : 2224 - 2227
  • [45] Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors
    Kim, Min Jae
    Park, Hyeong Jin
    Yoo, Sungwon
    Cho, Min Hee
    Jeong, Jae Kyeong
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (05) : 2409 - 2416
  • [46] Appropriate choice of channel ratio in thin-film transistors for the exact determination of field-effect mobility
    Okamura, Koshi
    Nikolova, Donna
    Mechau, Norman
    Hahn, Horst
    APPLIED PHYSICS LETTERS, 2009, 94 (18)
  • [47] High-performance organic–inorganic hybrid perovskite thin-film field-effect transistors
    Linlin Tang
    Yuze Peng
    Zhou Zhou
    Yuxiang Wu
    Jian Xu
    Juan Li
    Yangyang Du
    Like Huang
    Hongkun Cai
    Jian Ni
    Jianjun Zhang
    Applied Physics A, 2018, 124
  • [48] NEW ANALYSIS OF FIELD-EFFECT CONDUCTANCE IN HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS
    LEE, S
    CHEN, I
    APPLIED PHYSICS LETTERS, 1982, 41 (06) : 558 - 560
  • [49] High-Performance Submicrometer ZnON Thin-Film Transistors With Record Field-Effect Mobility
    Kuan, Chin-I
    Lin, Horng-Chih
    Li, Pei-Wen
    Huang, Tiao-Yuan
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (03) : 303 - 305
  • [50] EFFECTS OF ORDER AND DISORDER ON FIELD-EFFECT MOBILITIES MEASURED ON CONJUGATED POLYMER THIN-FILM TRANSISTORS
    HOLLAND, ER
    BLOOR, D
    MONKMAN, AP
    BROWN, A
    DELEEUW, D
    BOUMAN, MM
    MEIJER, EW
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (12) : 7954 - 7958
12345