Energy-dependent carrier relaxation in self-assembled InAs quantum dots

被引：0
|
作者：
Ling, H.S. [1 ]
Lee, C.P. [1 ]
Lo, M.C. [1 ]
机构：
[1] Department of Electronic Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan
来源：
Journal of Applied Physics | 2008年 / 103卷 / 12期
关键词：
Photoluminescence spectroscopy;
D O I：
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摘要：
Journal article (JA)
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