An investigation on hot-carrier reliability and degradation index in lateral diffused metal-oxide-semiconductor field-effect transistors

被引：0

作者：

Tian, Kuen-Shiuan ^{[1
]}

Chen, Jone F. ^{[1
]}

Chen, Shiang-Yu ^{[1
]}

Wu, Kuo-Ming ^{[2
]}

Lee, J.R. ^{[1
]}

Huang, Tsung-Yi ^{[2
]}

Liu, C.M. ^{[2
]}

Hsu, S.L. ^{[2
]}

机构：

[1] Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan

[2] Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan

来源：

Japanese Journal of Applied Physics | 2008年 / 47卷 / 4 PART 2期

关键词：

12;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：2641 / 2644

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