Investigation on the electrical properties and inhomogeneous distribution of ZnO:Al thin films prepared by dc magnetron sputtering at low deposition temperature

被引：0
|
作者：
Zhang, X.B. [1 ]
Pei, Z.L. [1 ]
Gong, J. [1 ]
Sun, C. [1 ]
机构：
[1] Division of Surface Engineering of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
来源：
Journal of Applied Physics | 2007年 / 101卷 / 01期
关键词：
A study of the electrical properties and spatial distribution of the ZnO:Al (AZO) thin films prepared by dc magnetron sputtering at low deposition temperature was presented; with emphasis on the origin of the resistivity inhomogeneity across the substrate. Various growth conditions were obtained by manipulating the growth temperature TS; total pressure PT; and ion-to-neutral ratio Ji Jn. The plasma characteristics such as radial ion density and floating/plasma potential distribution over the substrate were measured by Langmuir probe; while the flux and energy distribution of energetic species were estimated through Monte Carlo simulations. The crystalline; stress and electrical properties of the films were found to be strongly dependent on TS and Ji Jn. Under the low Ji Jn (<0.3) conditions; the TS exerted a remarkable influence on film quality. The films prepared at 90 °C were highly compressed; exhibiting poor electrical properties and significant spatial distribution. High quality films with low stress and resistivity were produced at higher TS (200 °C). Similarly; at lower TS (90 °C); higher Ji Jn (∼2) dramatically improved the film resistivity as well as its lateral distribution. Moreover; it indicated that the role of ion bombardment is dependent on the mechanism of dissipation of incident species. Ion bombardment is beneficial to the film growth if the energy of incident species Ei is below the penetration threshold Epet (∼33 eV for ZnO); on the other hand; the energy subimplant mechanism would work; and the bombardment degrades the film quality when Ei is over the Epet. The energetic bombardment of negative oxygen ions rather than the positives dominated the resistivity distribution of AZO films; while the nonuniform distribution of active oxygen played a secondary role which was otherwise more notable under conditions of lower TS and Ji Jn. © 2007 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Properties of transparent conductive ZnO:Al thin films prepared by magnetron sputtering
    Fu, EG
    Zhuang, DM
    Zhang, G
    Ming, Z
    Yang, WF
    Liu, JJ
    MICROELECTRONICS JOURNAL, 2004, 35 (04) : 383 - 387
  • [22] Properties of Al Doped ZnO Thin films by DC Reaction Magnetron Sputtering
    Lu, Feng
    Sun, Yu
    Xu, Cheng-hai
    EMERGING FOCUS ON ADVANCED MATERIALS, PTS 1 AND 2, 2011, 306-307 : 362 - +
  • [23] Preparation and characterization of ZnO:Al(ZAO) thin films by DC reactive magnetron sputtering at low temperature
    Shao, Shuai
    Xi, Hui-Zhi
    Chang, Yun-Peng
    Dongbei Daxue Xuebao/Journal of Northeastern University, 2010, 31 (SUPPL. 2): : 87 - 89
  • [24] Influence of hydrogen annealing temperature on the optical and electrical properties of ZnO thin films prepared by magnetron sputtering
    Ma, Ming
    Gao, Chuan-Yu
    Zhou, Ming
    Li, Bao-Jia
    Li, Hao-Hua
    Gongneng Cailiao/Journal of Functional Materials, 2013, 44 (15): : 2268 - 2270
  • [25] Electrical and optical properties of ZnO:Al thin films grown by magnetron sputtering
    Bai, Shr-Nan
    Tseng, Tseung-Yuen
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2009, 20 (03) : 253 - 256
  • [26] Origin of electrical property distribution on the surface of ZnO:Al films prepared by magnetron sputtering
    Minami, T
    Miyata, T
    Yamamoto, T
    Toda, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04): : 1584 - 1589
  • [27] Electrical and optical properties of ZnO:Al thin films grown by magnetron sputtering
    Shr-Nan Bai
    Tseung-Yuen Tseng
    Journal of Materials Science: Materials in Electronics, 2009, 20 : 253 - 256
  • [28] Microstructural and optical properties of ZnO/(Ni) thin films prepared by DC magnetron sputtering
    Gao, Fei
    Tan, Li Xin
    Wu, Zai Hua
    Liu, Xiao Yan
    JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 484 (1-2) : 489 - 493
  • [29] OPTICAL-PROPERTIES OF ZNO - AL FILMS PREPARED BY REACTIVE DC MAGNETRON SPUTTERING
    GHOSH, S
    SARKAR, A
    CHAUDHURI, S
    PAL, AK
    VACUUM, 1991, 42 (10-11) : 645 - 648
  • [30] Low substrate temperature deposition of transparent and conducting ZnO:Al thin films by RF magnetron sputtering
    Ravindra Waykar
    Amit Pawbake
    Rupali Kulkarni
    Ashok Jadhavar
    Adinath Funde
    Vaishali Waman
    Rupesh Dewan
    Habib Pathan
    Sandesh Jadkar
    Journal of Semiconductors, 2016, (04) : 28 - 35
12345