Investigation on the electrical properties and inhomogeneous distribution of ZnO:Al thin films prepared by dc magnetron sputtering at low deposition temperature

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作者：
Zhang, X.B. [1 ]
Pei, Z.L. [1 ]
Gong, J. [1 ]
Sun, C. [1 ]
机构：
[1] Division of Surface Engineering of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
来源：
Journal of Applied Physics | 2007年 / 101卷 / 01期
关键词：
A study of the electrical properties and spatial distribution of the ZnO:Al (AZO) thin films prepared by dc magnetron sputtering at low deposition temperature was presented; with emphasis on the origin of the resistivity inhomogeneity across the substrate. Various growth conditions were obtained by manipulating the growth temperature TS; total pressure PT; and ion-to-neutral ratio Ji Jn. The plasma characteristics such as radial ion density and floating/plasma potential distribution over the substrate were measured by Langmuir probe; while the flux and energy distribution of energetic species were estimated through Monte Carlo simulations. The crystalline; stress and electrical properties of the films were found to be strongly dependent on TS and Ji Jn. Under the low Ji Jn (<0.3) conditions; the TS exerted a remarkable influence on film quality. The films prepared at 90 °C were highly compressed; exhibiting poor electrical properties and significant spatial distribution. High quality films with low stress and resistivity were produced at higher TS (200 °C). Similarly; at lower TS (90 °C); higher Ji Jn (∼2) dramatically improved the film resistivity as well as its lateral distribution. Moreover; it indicated that the role of ion bombardment is dependent on the mechanism of dissipation of incident species. Ion bombardment is beneficial to the film growth if the energy of incident species Ei is below the penetration threshold Epet (∼33 eV for ZnO); on the other hand; the energy subimplant mechanism would work; and the bombardment degrades the film quality when Ei is over the Epet. The energetic bombardment of negative oxygen ions rather than the positives dominated the resistivity distribution of AZO films; while the nonuniform distribution of active oxygen played a secondary role which was otherwise more notable under conditions of lower TS and Ji Jn. © 2007 American Institute of Physics;
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