Enhanced piezoelectric response of Bi4Ti3O12-based ceramics through engineered domain configuration and grain size

被引:0
|
作者
Shi, Wei [1 ]
Wu, Yutong [1 ]
Tu, Hao [1 ]
Guan, Shangyi [1 ]
Xing, Jie [1 ]
Xu, Liang [1 ]
Xu, Hongfei [1 ]
Chen, Qiang [1 ]
机构
[1] Sichuan Univ, Coll Mat Sci & Engn, Chengdu, Peoples R China
基金
中国国家自然科学基金;
关键词
Grain size effect; Domain configuration; Piezoelectric properties; Dielectric properties; BARIUM-TITANATE; TEMPERATURE; PIEZOCERAMICS; PERFORMANCE; ORIGIN; ND;
D O I
10.1016/j.scriptamat.2024.116493
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
High-temperature ferroelectrics are highly desirable for numerous electromechanical devices such as sensors and actuators for high-temperature applications. However, it's challenging to achieve high piezoelectricity and TC to meet the urgent need for high sensitivity and high temperature. Herein, the piezoelectricity of Bi3.97Ce0.03Ti2.99W0.005Ta0.005O12 (BCTWT) ceramics is enhanced by engineering domain configuration and grain size. We have carried out a systematic analysis of the grain size dependent on the electrical performances of BCTWT ceramics. The d33 value increases with increasing grain size, a max d33 value of 36.6 pC/N is obtained at average grain size of 19.11 mu m. Besides, the reduction of domain size, increasing domain wall (DW) density and weak pinning effect induce excellent domain switching performances in coarse-grained BCTWT ceramics, which are mainly responsible for the superior electrical properties. These findings provide a universal approach to achieving high piezoelectricity of BIT-based ceramics by engineering domain configuration and grain size.
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页数:6
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