Unveiling the structural origin to control resistance drift in phase-change memory materials

被引：0
|
作者：
Zhang, Wei [1 ,2 ]
Ma, Evan [3 ]
机构：
[1] Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an,710049, China
[2] Materials Studio for Neuro-inspired Computing, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an,710049, China
[3] Department of Materials Science and Engineering, Johns Hopkins University, United States
来源：
Materials Today | 2020年 / 41卷
关键词：
The global demand for data storage and processing is increasing exponentially. To deal with this challenge; massive efforts have been devoted to the development of advanced memory and computing technologies. Chalcogenide phase-change materials (PCMs) are currently at the forefront of this endeavor. In this Review; we focus on the mechanisms of the spontaneous structural relaxation – aging – of amorphous PCMs; which causes the well-known resistance drift issue that significantly reduces the device accuracy needed for phase-change memory and computing applications. We review the recent breakthroughs in uncovering the structural origin; achieved through state-of-the-art experiments and ab initio atomistic simulations. Emphasis will be placed on the evolving atomic-level details during the relaxation of the complex amorphous structure. We also highlight emerging strategies to control aging; inspired by the in-depth structural understanding; from both materials science and device engineering standpoints; that offer effective solutions to reduce the resistance drift. In addition; we discuss an important new paradigm – machine learning – and the potential power it brings in interrogating amorphous PCMs as well as other disordered alloy systems. Finally; we present an outlook to comment on future research opportunities in amorphous PCMs; as well as on their reduced aging tendency in other advanced applications such as non-volatile photonics. © 2020 The Authors;
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页码：156 / 176
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