Unveiling the structural origin to control resistance drift in phase-change memory materials

被引：0
|
作者：
Zhang, Wei [1 ,2 ]
Ma, Evan [3 ]
机构：
[1] Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an,710049, China
[2] Materials Studio for Neuro-inspired Computing, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an,710049, China
[3] Department of Materials Science and Engineering, Johns Hopkins University, United States
来源：
Materials Today | 2020年 / 41卷
关键词：
The global demand for data storage and processing is increasing exponentially. To deal with this challenge; massive efforts have been devoted to the development of advanced memory and computing technologies. Chalcogenide phase-change materials (PCMs) are currently at the forefront of this endeavor. In this Review; we focus on the mechanisms of the spontaneous structural relaxation – aging – of amorphous PCMs; which causes the well-known resistance drift issue that significantly reduces the device accuracy needed for phase-change memory and computing applications. We review the recent breakthroughs in uncovering the structural origin; achieved through state-of-the-art experiments and ab initio atomistic simulations. Emphasis will be placed on the evolving atomic-level details during the relaxation of the complex amorphous structure. We also highlight emerging strategies to control aging; inspired by the in-depth structural understanding; from both materials science and device engineering standpoints; that offer effective solutions to reduce the resistance drift. In addition; we discuss an important new paradigm – machine learning – and the potential power it brings in interrogating amorphous PCMs as well as other disordered alloy systems. Finally; we present an outlook to comment on future research opportunities in amorphous PCMs; as well as on their reduced aging tendency in other advanced applications such as non-volatile photonics. © 2020 The Authors;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：156 / 176
相关论文
共 50 条
  • [1] Unveiling the structural origin to control resistance drift in phase-change memory materials
    Zhang, Wei
    Ma, Evan
    MATERIALS TODAY, 2020, 41 : 156 - 176
  • [2] Statistics of Resistance Drift Due to Structural Relaxation in Phase-Change Memory Arrays
    Boniardi, Mattia
    Ielmini, Daniele
    Lavizzari, Simone
    Lacaita, Andrea L.
    Redaelli, Andrea
    Pirovano, Agostino
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (10) : 2690 - 2696
  • [3] Understanding phase-change materials with unexpectedly low resistance drift for phase-change memories
    Li, Chao
    Hu, Chaoquan
    Wang, Jianbo
    Yu, Xiao
    Yang, Zhongbo
    Liu, Jian
    Li, Yuankai
    Bi, Chaobin
    Zhou, Xilin
    Zheng, Weitao
    JOURNAL OF MATERIALS CHEMISTRY C, 2018, 6 (13) : 3387 - 3394
  • [4] Electronic mechanism for resistance drift in phase-change memory materials: link to persistent photoconductivity
    Elliott, S. R.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (21)
  • [5] Bonding origin of optical contrast in phase-change memory materials
    Huang, B.
    Robertson, J.
    PHYSICAL REVIEW B, 2010, 81 (08):
  • [6] Phase-change memory materials
    Kraft, Arno
    CHEMISTRY & INDUSTRY, 2022, 86 (01) : 43 - 43
  • [7] Chemical understanding of resistance drift suppression in Ge-Sn-Te phase-change memory materials
    Chen, Yuhan
    Sun, Liang
    Zhou, Yuxing
    Zewdie, Getasew M.
    Deringer, Volker L.
    Mazzarello, Riccardo
    Zhang, Wei
    JOURNAL OF MATERIALS CHEMISTRY C, 2020, 8 (01) : 71 - 77
  • [8] Microscopic origin of resistance drift in the amorphous state of the phase-change compound GeTe
    Gabardi, S.
    Caravati, S.
    Sosso, G. C.
    Behler, J.
    Bernasconi, M.
    PHYSICAL REVIEW B, 2015, 92 (05):
  • [9] Physical origin of the resistance drift exponent in amorphous phase change materials
    Boniardi, Mattia
    Ielmini, Daniele
    APPLIED PHYSICS LETTERS, 2011, 98 (24)
  • [10] Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge2Sb2Te5 materials for phase-change neuron synaptic devices
    Chen, Chen
    Zhu, Jinyi
    Chen, Yingqi
    Wang, Guoxiang
    Journal of Alloys and Compounds, 2022, 892
12345