Optimization of CMOS detector structures coupled with 2.58 THz miniaturized differential antenna and high-speed imaging

被引:0
|
作者
Zhang, Xin [1 ]
Fu, Haipeng [1 ]
Ma, Kaixue [1 ]
Yan, Ningbing [1 ]
机构
[1] Tianjin Univ, Sch Microelect, Tianjin 300072, Peoples R China
来源
OPTICS EXPRESS | 2024年 / 32卷 / 25期
基金
中国国家自然科学基金;
关键词
FIELD-EFFECT TRANSISTOR; TERAHERTZ DETECTOR; RADIATION; GENERATION;
D O I
10.1364/OE.538652
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This paper presents five different detector structures integrated with a 2.58 THz miniaturized differential antenna-on-chip (AoC) in a 55-nm standard complementary metal-oxide- semiconductor (CMOS) process. The primary goal is to study the impact of different connection methods on the performance of the detectors. The article provides a detailed analysis of the detector response models under gate-driven and source-driven modes, and derives a formula for calculating the responsivity (Rv). Additionally, this paper introduces what we believe to be a novel gate-driven series-structured detector, which achieved a maximum R v of 343.9 V/W and a minimum noise equivalent power (NEP) of 150 pW/Hz1/2 at a modulation frequency of 195 Hz. At this frequency, imaging of items such as a screw within envelope and a scalpel blade was realized. Finally, this study also performed high-speed terahertz (THz) imaging of dry leaf at a modulation frequency of 100 kHz, clearly displaying the venation of the leaf.<br /> (c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:44970 / 44986
页数:17
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