Hydrogen detection in individual diamond grains on Si(100) substrate grown by microwave-assisted chemical vapor deposition

被引：0
|
作者：
Sakaguchi, Isao [1 ]
机构：
[1] National Institute for Materials Science, I-I Namiki, Tsukuba, Ibaraki 305-0044, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 8 A期
关键词：
5;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：6398 / 6399
相关论文
共 50 条
  • [31] Comparative study of diamond films grown on silicon substrate using microwave plasma chemical vapor deposition and hot-filament chemical vapor deposition technique
    Dar, MA
    Kim, YS
    Ansari, SC
    Kim, HI
    Khang, G
    Van Chiem, C
    Shin, HS
    KOREAN JOURNAL OF CHEMICAL ENGINEERING, 2005, 22 (05) : 770 - 773
  • [32] Characterization study of textured diamond films grown on silicon (100) substrate by hot filament chemical vapor deposition
    Han, Li
    Wang, Xiao-Hui
    Yu, Wei
    Dong, Li-Fang
    Li, Xiao-Wei
    Fu, Guang-Sheng
    Wuli Xuebao/Acta Physica Sinica, 46 (11): : 2206 - 2214
  • [33] Structural study and mechanisms of nucleation and growth of diamond crystal grown on scratched Si(100) substrate by hot filament chemical vapor deposition method
    Shamsuzzoha, M
    Kumar, A
    SURFACE ENGINEERING: SCIENCE AND TECHNOLOGY I, 1999, : 367 - 376
  • [34] Optical detection of paramagnetic defects in diamond grown by chemical vapor deposition
    Pellet-Mary, C.
    Huillery, P.
    Perdriat, M.
    Tallaire, A.
    Hetet, G.
    PHYSICAL REVIEW B, 2021, 103 (10)
  • [35] The effect of the substrate position on microwave plasma chemical vapor deposition of diamond films
    Lin, CR
    Su, CH
    Hung, CH
    Chang, C
    Yan, SH
    SURFACE & COATINGS TECHNOLOGY, 2006, 200 (10): : 3156 - 3159
  • [36] Epitaxial nucleation of diamond on an iridium substrate by bias treatment, for microwave plasma-assisted chemical vapor deposition
    Saito, T
    Tsuruga, S
    Ohya, N
    Kusakabe, K
    Morooka, S
    Maeda, H
    Sawabe, A
    Suzuki, K
    DIAMOND AND RELATED MATERIALS, 1998, 7 (09) : 1381 - 1384
  • [37] The photoluminescence of ZnO thin films grown on Si (100) substrate by plasma-enhanced chemical vapor deposition
    Li, BS
    Liu, YC
    Zhi, ZZ
    Shen, DZ
    Lu, YM
    Zhang, JY
    Fan, XW
    JOURNAL OF CRYSTAL GROWTH, 2002, 240 (3-4) : 479 - 483
  • [38] Tilt deformation of metalorganic chemical vapor deposition grown GaP on Si Substrate
    Suzuki, Takayuki
    Mori, Masatoshi
    Jiang, Z.K.
    Soga, Tetsuo
    Jimbo, Takashi
    Umeno, Masayoshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (07): : 2079 - 2084
  • [39] Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition
    Feng, ZC
    MICROELECTRONIC ENGINEERING, 2006, 83 (01) : 165 - 169
  • [40] Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition
    Koinkar, Pankaj M.
    Patil, Sandip S.
    Kim, Tae-Gyu
    Yonekura, Daisuke
    More, Mahendra A.
    Joag, Dilip S.
    Murakami, Ri-ichi
    APPLIED SURFACE SCIENCE, 2011, 257 (06) : 1854 - 1858
12345