Preparation and characterization of aluminum-doped silicon carbide by combustion synthesis

被引：0
|
作者：
Li, Zhimin [1 ,2 ]
Zhou, Wancheng [1 ]
Su, Xiaolei [1 ]
Luo, Fa [1 ]
Zhu, Dongmei [1 ]
Liu, Pengle [1 ]
机构：
[1] State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China
[2] School of Technical Physics, Xidian University, Xi'an 710071, China
来源：
Journal of the American Ceramic Society | 2008年 / 91卷 / 08期
关键词：
Al-doped β-SiC powders were synthesized via combustion reaction of the Si/C system in a 0.1 MPa nitrogen atmosphere; using polytetrafluoroethylene as the chemical activator and Al as the dopant. The β-SiC powders produced have fine spherical particles and narrow particle size distribution. The impurity phase of Al2O3 is generated and the doped β-SiC contains N component when Al content is up to 10%. The electric permittivities of β-SiC samples were determined in the frequency range of 8.2-12.4 GHz. Results show that the β-SiC doped with 10% Al has the highest real part Ε′ and imaginary part Ε″ of permittivity. The mechanism of dielectric loss by doping has been discussed. © 2008 The American Ceramic Society;
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摘要：
Journal article (JA)
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页码：2607 / 2610
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