Preparation and characterization of aluminum-doped silicon carbide by combustion synthesis

被引：0
|
作者：
Li, Zhimin [1 ,2 ]
Zhou, Wancheng [1 ]
Su, Xiaolei [1 ]
Luo, Fa [1 ]
Zhu, Dongmei [1 ]
Liu, Pengle [1 ]
机构：
[1] State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China
[2] School of Technical Physics, Xidian University, Xi'an 710071, China
来源：
Journal of the American Ceramic Society | 2008年 / 91卷 / 08期
关键词：
Al-doped β-SiC powders were synthesized via combustion reaction of the Si/C system in a 0.1 MPa nitrogen atmosphere; using polytetrafluoroethylene as the chemical activator and Al as the dopant. The β-SiC powders produced have fine spherical particles and narrow particle size distribution. The impurity phase of Al2O3 is generated and the doped β-SiC contains N component when Al content is up to 10%. The electric permittivities of β-SiC samples were determined in the frequency range of 8.2-12.4 GHz. Results show that the β-SiC doped with 10% Al has the highest real part Ε′ and imaginary part Ε″ of permittivity. The mechanism of dielectric loss by doping has been discussed. © 2008 The American Ceramic Society;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：2607 / 2610
相关论文
共 50 条
  • [1] Preparation and characterization of aluminum-doped silicon carbide by combustion synthesis
    Li, Zhimin
    Zhou, Wancheng
    Su, Xiaolei
    Luo, Fa
    Zhu, Dongmei
    Liu, Pengle
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2008, 91 (08) : 2607 - 2610
  • [2] Investigation of magnetism in aluminum-doped silicon carbide nanotubes
    Behzad, Somayeh
    Chegel, Raad
    SOLID STATE COMMUNICATIONS, 2013, 174 : 38 - 42
  • [3] LUMINESCENCE OF SCANDIUM-DOPED AND ALUMINUM-DOPED SILICON-CARBIDE
    ANDREEV, AP
    SAFARALIEV, GK
    TAIROV, YM
    TSVETKOV, VF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (08): : 1074 - 1074
  • [4] BRIGHT-LINE LUMINESCENCE OF ALUMINUM-DOPED SILICON CARBIDE
    SOKOLOV, VI
    MAKAROV, VV
    MOKHOV, EN
    SOVIET PHYSICS SOLID STATE,USSR, 1970, 12 (01): : 229 - +
  • [5] AC susceptibility study of superconducting aluminum-doped silicon carbide
    Kriener, M.
    Muranaka, T.
    Akimitsu, J.
    Maeno, Y.
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2010, 470 : S602 - S603
  • [6] LUMINESCENCE OF SCANDIUM- AND ALUMINUM-DOPED SILICON CARBIDE.
    Andreev, A.P.
    Safaraliev, G.K.
    Tairov, Yu.M.
    Tsvetkov, V.F.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (08):
  • [7] Synthesis and characterization of aluminum-doped graphitic carbon
    Gordon, Isabelle P.
    Suenram, Grace
    McGlamery, Devin
    Stadie, Nicholas P.
    MRS COMMUNICATIONS, 2024, 14 (03) : 323 - 329
  • [8] GRAIN-BOUNDARY SEGREGATION IN ALUMINUM-DOPED SILICON-CARBIDE
    TAJIMA, Y
    KINGERY, WD
    JOURNAL OF MATERIALS SCIENCE, 1982, 17 (08) : 2289 - 2297
  • [9] Incomplete ionization in aluminum-doped 4H-silicon carbide
    Darmody, C.
    Goldsman, N.
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (14)
  • [10] LIFETIMES IN ALUMINUM-DOPED SILICON
    Schmidt, Jan
    Thiemann, Nils
    Bock, Robert
    Brendel, Rolf
    2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3, 2009, : 1878 - 1881
12345