Numerical simulation of Si/Si1-xGex resonant tunneling diode at room temperature

被引:0
|
作者
Institute of Microelectronics, Tsinghua University, Beijing 100084, China [1 ]
机构
来源
Pan Tao Ti Hsueh Pao | 2006年 / 5卷 / 869-873期
关键词
Diodes;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Simulation of Band-to-Band Tunneling in Si/Ge and Si/Si1-xGex Heterojunctions by Using Monte Carlo Method
    Wei, Kangliang
    Zeng, Lang
    Wang, Juncheng
    Peng, Yahua
    Du, Gang
    Liu, Xiaoyan
    2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012), 2012, : 368 - 370
  • [32] Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex
    Min, B. -G.
    Yoo, J. -H.
    Sohn, H. -C.
    Ko, D. -H.
    Cho, M. -H.
    Lee, T. -W.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (04) : H96 - H98
  • [33] STEBIC of Si/Si1-xGex/Si heterostructures
    Brown, PD
    Humphreys, CJ
    ELECTRON MICROSCOPY AND ANALYSIS 1995, 1995, 147 : 285 - 288
  • [34] Novel Si1-xGex/Si MOSFET
    Li, Kaicheng
    Sun, Weifeng
    Zhang, Jing
    Wen, Yao
    Huang, Yan
    d'Avitaya, F.Arnaud
    Xiangdong, Wu
    Yin, Xianwen
    International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, : 768 - 771
  • [35] B implants in Si1-xGex/Si
    Berry, AK
    Thompson, PE
    Rao, MV
    Fatemi, M
    Dietrich, HB
    APPLIED PHYSICS LETTERS, 1996, 68 (03) : 391 - 393
  • [36] A novel Si1-xGex/Si MOSFET
    Li, KC
    Sun, WF
    Zhang, J
    Yao, W
    Yan, H
    d'Avitaya, FA
    Wu, XD
    Yin, XW
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 768 - 771
  • [37] High electron mobility in strained Si channel of Si1-xGex/Si/Si1-xGex heterostructure with abrupt interface
    Sugii, N
    Nakagawa, K
    Kimura, Y
    Yamaguchi, S
    Miyao, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (8A) : A140 - A142
  • [38] Electric field effect on the spatially separated electron-hole recombination in an Si/Si1-xGex resonant tunneling heterostructure
    Mejri, H
    Ben Zid, F
    Bhouri, A
    Ben fredj, A
    Said, M
    Lazzari, JL
    Derrien, J
    PHYSICA B-CONDENSED MATTER, 2002, 322 (1-2) : 37 - 41
  • [39] ROOM-TEMPERATURE OBSERVATION OF PHOTOCURRENT DEPENDENCE ON APPLIED BIAS IN SI1-XGEX/SI MULTIQUANTUM WELLS
    CHOWDHURY, AA
    RASHED, MM
    MAZIAR, CM
    MURTAZA, SS
    CAMPBELL, JC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1685 - 1688
  • [40] Study of Si1-xGex/Si/Si1-xGex heterostructures with abrupt interfaces for ultrahigh mobility FETs
    Sugii, N
    Nakagawa, K
    Yamaguchi, S
    Miyao, M
    III-V AND IV-IV MATERIALS AND PROCESSING CHALLENGES FOR HIGHLY INTEGRATED MICROELECTRONICS AND OPTOELECTRONICS, 1999, 535 : 269 - 274